Semiconductor Contrast Image Interconnect Extraction
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Solution Overview
Problem
Existing methods for failure analysis of semiconductor elements using electron beam failure analysis devices struggle to identify failed sites when no regular semiconductor element is available for comparison, due to difficulties in comparing potential contrast images from miniaturized semiconductor elements.
Innovation Solution
A method involving color grade number reduction, interconnect contrast extraction, and shift processing to enhance the visibility of interconnect patterns in contrast images, allowing for accurate extraction and noise removal from contour portions of the images.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If potential contrast images from miniaturized semiconductor elements are compared to identify failed sites, then failure analysis capability is improved, but image comparison accuracy deteriorates due to difficulty in comparing contrast images
Solution Approach 1:
The patent creates a reference potential contrast image from a regular (non-defective) semiconductor element and compares it with the inspection target image. This copying approach allows accurate identification of failed sites by highlighting differences between the reference and actual images, resolving the difficulty of comparing miniaturized element images.
Solution Approach 2:
The patent segments the potential contrast image into multiple regions based on design data, then performs contrast extraction and noise removal on each region separately. This segmentation enables precise processing of specific interconnect regions, improving the accuracy of failure site identification in miniaturized elements.
2Measurement precision
If interconnect patterns are extracted from contrast images, then verification precision is improved, but noise in contour portions increases
Solution Approach 1:
The patent extracts the interconnect pattern from the potential contrast image by comparing it with the reference image. This extraction process isolates the interconnect structure from the background, enabling precise verification while the subsequent noise removal step eliminates contour noise.
Solution Approach 2:
The patent uses a reference potential contrast image as an intermediary to facilitate the extraction and verification of interconnect patterns. By comparing the inspection target with this reference intermediary, the system can identify actual interconnect structures while filtering out noise, particularly in contour portions.
3Measurement precision
If contrast images of semiconductor elements are processed to extract interconnect patterns, then interconnect verification is improved, but processing complexity increases
Solution Approach 1:
The patent performs preliminary processing by creating a reference potential contrast image from design data and regular semiconductor element images before conducting the actual failure analysis. This preliminary action establishes a baseline for comparison, simplifying the subsequent extraction and verification processes.
Solution Approach 2:
The patent creates a reference copy of the potential contrast image from regular semiconductor elements and uses this copy as a template for comparing inspection targets. This copying approach simplifies the processing complexity by providing a pre-established reference for pattern matching and difference analysis.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Enables precise verification and extraction of interconnects and their contrasts, facilitating effective comparison of regular and failed semiconductor elements for accurate failure site location.
Implementation Method 1
The electrically conductive layer exposed is irradiated with an electron beam, and secondary electrons emitted from the semiconductor element are observed with the scanning electron microscope (SEM) to obtain a potential contrast image
Data Source
AI summary
A method for processing a contrast picture image of a semiconductor element. The method comprises; a color grade number reducing processing that automatically reduces number of color grades of the contrast picture image of the semiconductor element, obtained from a device for analysis, in keeping with the contrast of the contrast picture image; an interconnect contrast extraction processing that classifies pixels contained in the contrast picture image, whose number of color grades has been reduced, in accordance with a preset contrast threshold value as reference, to extract an interconnect pattern fractionated into a plurality of number of contrasts; and a shift processing that removes noise contained in a contour portion of the interconnect pattern by shifting the contour portion; whereby an interconnect pattern contained in the contrast image of the semiconductor element obtained from the device for analysis is fractionated into a plurality of preset contrasts to be extracted.