Semiconductor Device Control Electrode for Gate Insulating Film Protection
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
In semiconductor device manufacturing, early-failure screening to prevent gate insulating film damage from high voltages exceeding the rating is challenging, as existing methods cannot effectively prevent damage to the film during the screening process.
Innovation Solution
A semiconductor device design with a control electrode between the semiconductor body and the first electrode, electrically connected to the second electrode, and insulated from the semiconductor body and first electrode, allows for the application of a screening voltage between the source electrode and the gate pad to avoid excessive voltage on the gate insulating film, using a protection element to control the breakdown voltage and prevent damage.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a high voltage exceeding the gate voltage rating is applied to the gate insulating film for early-failure screening, then defects in the gate insulating film can be detected, but the gate insulating film may receive damage due to the excessive voltage
Solution Approach 1:
A control electrode is introduced as an intermediary between the gate electrode and the back gate. This control electrode enables precise control of the voltage distribution, allowing high voltage to be applied for screening while preventing excessive voltage from damaging the gate insulating film. The control electrode acts as a mediator that decouples the screening function from the potential damage pathway.
Solution Approach 2:
The invention changes the voltage distribution parameters by introducing the control electrode. By independently controlling the potential of the control electrode relative to both the gate electrode and back gate, the voltage across the gate insulating film can be precisely regulated to remain within safe limits while still enabling effective screening through controlled high voltage application.
2Reliability
If a control electrode is added to control voltage distribution, then gate insulating film protection is improved, but device structure complexity increases
Solution Approach 1:
The control electrode is designed to perform multiple functions: it enables early-failure screening by controlling voltage distribution, protects the gate insulating film from excessive voltage, and can serve as an additional control terminal for device operation. This multi-functionality justifies the added structural element by providing multiple benefits from a single component.
Solution Approach 2:
The control electrode is positioned specifically between the gate electrode and back gate, creating a localized voltage control zone. This localized approach allows precise voltage management at the critical gate insulating film interface without requiring complex global restructuring of the entire device, thereby limiting the increase in overall device complexity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This design enables effective early-failure screening of the gate insulating film, preventing damage from high voltages and improving the reliability of the semiconductor device by controlling the breakdown voltage and simplifying the mounting process.
Implementation Method 1
The control electrode is electrically insulated from the semiconductor body with a second insulating film interposed, and is electrically insulated from the first electrode with a third insulating film interposed
Implementation Method 2
applying a high voltage between the gate electrode and the back gate exceeding the gate voltage rating
Data Source
AI summary
A semiconductor device includes a semiconductor body, first to third electrodes provided on the semiconductor body, and a control electrode. The control electrode is provided between the semiconductor body and the first electrode. The semiconductor body includes first to sixth layers. The second layer of a second conductivity type is selectively provided between the first layer of a first conductivity type and the first electrode. The third layer of the first conductivity type is selectively provided between the second layer and the first electrode. The fourth layer of the second conductivity type is provided between the first layer and the second and third electrodes. The fifth layer of the first conductivity type is selectively provided in the fourth layer and electrically connected to the first electrode. The sixth layer of the first conductivity type is provided in the fourth layer, and electrically connected to the third electrode.