Semiconductor Structure with Convex Body Well for Leakage and Breakdown Voltage
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Solution Overview
Problem
In semiconductor structures, the replacement of P-field masks with P-Well for NMOS in CMOS devices leads to lower leakage current but reduced breakdown voltage, necessitating a solution to enhance both leakage current prevention and breakdown voltage.
Innovation Solution
A semiconductor structure with a deep well and body well configuration, including a convex region and a drive-in region outside the convex region, which prevents leakage current and increases breakdown voltage by optimizing doping concentrations and regions.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Object-generated harmful factors
If P-field mask is replaced by P-Well for NMOS in CMOS devices, then leakage current prevention is improved, but breakdown voltage is reduced
Solution Approach 1:
The device is segmented into distinct functional regions: a deep well with high doping concentration for leakage prevention, and a drive-in region with lower doping concentration for breakdown voltage enhancement. This segmentation allows each region to optimize its specific function without compromising the other.
Solution Approach 2:
Different doping concentrations are applied to different spatial locations within the device structure. The deep well has high doping concentration specifically where leakage current needs to be prevented, while the drive-in region has lower doping concentration where breakdown voltage needs to be maintained.
2Object-generated harmful factors
If higher concentration of P-well is used, then leakage current is lowered, but breakdown voltage is reduced
Solution Approach 1:
The doping structure is divided into two segments: a deep well with high P-well concentration for leakage suppression, and a drive-in region with lower concentration for breakdown voltage protection. This resolves the contradiction by spatially separating the two conflicting requirements.
Solution Approach 2:
The solution extends the doping structure into the vertical dimension with a deep well extending beneath the isolated structure, allowing high doping concentration to be concentrated where needed for leakage prevention while maintaining lower concentrations in regions affecting breakdown voltage.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The proposed structure effectively prevents leakage current and enhances breakdown voltage, improving the stability and performance of semiconductor devices.
Implementation Method 1
A drive-in process is then performed on the deep doping region to form a deep well and transform the undoped region into a drive-in region
Data Source
AI summary
A semiconductor structure and a method of manufacturing the semiconductor structure are provided. The semiconductor structure includes at least a substrate, an isolated structure, a gate, a source, a drain, a deep well, and a body well. The deep well extends under the isolated structure, and the body well is formed in the deep well between the gate and the isolated structure, wherein the body well has a convex region extending under the isolated structure. The deep well has a drive-in region outside the convex region of the body well, and the drive-in region has a lower doping concentration than remainder of the deep well.