Semiconductor Cooling Device With Laminar To Turbulent Flow Transition
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Solution Overview
Problem
Existing semiconductor cooling devices face challenges in uniform cooling due to temperature differences within the cooling medium flow channels, leading to increased thermal stress and reduced power cycle life, especially with high-speed, high-heat semiconductor devices using materials like SiC and GaN.
Innovation Solution
The semiconductor cooling device incorporates a laminar flow section upstream and a turbulent flow section downstream, where the cooling medium transitions from laminar to turbulent flow, promoting uniform heat transmission and reducing thermal stress by enhancing cooling efficiency.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Device complexity
If a uniform cooling medium flow channel is used, then the device structure is simple, but the cooling uniformity deteriorates due to temperature difference between inlet and outlet regions
Solution Approach 1:
The cooling medium flow channel is divided into different sections with different flow characteristics: a laminar flow section in the upstream region and a turbulent flow section in the downstream region. This local differentiation allows the inlet region to maintain lower temperature while the outlet region enhances heat dissipation through turbulent flow, achieving uniform cooling across the semiconductor device.
Solution Approach 2:
The flow channel is segmented into distinct laminar and turbulent flow regions. The laminar flow section (first region) and turbulent flow section (second region) are separated by a flow control structure, allowing each section to perform its specific cooling function independently while working together to achieve overall cooling uniformity.
2Device complexity
If the cooling medium flows through a uniform channel, then the flow pattern is simple, but thermal stress increases due to temperature difference in the semiconductor device
Solution Approach 1:
Different flow patterns are applied to different regions: laminar flow in the upstream region and turbulent flow in the downstream region. This local optimization ensures that each region of the semiconductor device receives appropriate cooling intensity, minimizing temperature differences and reducing thermal stress to extend power cycle life.
Solution Approach 2:
The flow regime parameter is changed along the flow channel direction. By transitioning from laminar flow (lower mixing, lower temperature rise) to turbulent flow (higher mixing, higher heat transfer coefficient), the system optimizes the balance between maintaining low inlet temperature and achieving high heat dissipation at the outlet, thereby reducing thermal stress.
3Stability of the object's composition
If laminar flow is maintained throughout the channel, then the flow is stable, but heat transmission efficiency decreases in the downstream region
Solution Approach 1:
The flow channel is divided into two segments: the first segment maintains laminar flow for stable, low-temperature cooling at the inlet, while the second segment transitions to turbulent flow for enhanced heat transmission efficiency at the outlet. This segmentation allows both flow stability and heat transmission efficiency to be optimized in their respective regions.
Solution Approach 2:
The laminar flow section is positioned upstream to preliminarily cool the semiconductor device inlet region with stable, low-temperature flow before the cooling medium enters the turbulent flow section, where enhanced heat transmission further cools the outlet region, achieving comprehensive cooling uniformity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This design ensures uniform cooling across the semiconductor device, extending the power cycle life and improving the overall longevity of the semiconductor device by minimizing thermal stress and thermal resistance.
Implementation Method 1
a laminar flow section which is provided in a region upstream of the cooling medium flow channel and allows the cooling medium to flow in the form of laminar flow
Implementation Method 2
a turbulent flow section which is provided in a region downstream of the laminar flow section in the cooling medium flow channel and allows the cooling medium, which flows in the form of laminar flow from the laminar flow section, to flow in the form of turbulent flow
Implementation Method 3
a cooling medium flow channel, through which a cooling medium for cooling the semiconductor chip flows
Data Source
AI summary
A semiconductor cooling device includes: a cooling medium flow channel, through which a cooling medium for cooling a semiconductor chip flows; a laminar flow section which is provided in a region upstream of the cooling medium flow channel and allows the cooling medium to flow in the form of laminar flow; and a turbulent flow section which is provided in a region downstream of the laminar flow section in the cooling medium flow channel and allows the cooling medium, which flows in the form of laminar flow from the laminar flow section, to flow in the form of turbulent flow.