Semiconductor Conductive Member Copper Diffusion Barrier
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Solution Overview
Problem
In semiconductor apparatuses, the use of copper for inter-substrate wiring can lead to diffusion into semiconductor well regions and interlayer insulating films, causing contamination and unreliable performance.
Innovation Solution
A conductive member with a copper region and a diffusion barrier region, where the diffusion coefficient of copper to the barrier material is lower than to the semiconductor and insulator layers, preventing copper diffusion and ensuring reliable electrical connections.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If copper is used for inter-substrate wiring, then electrical conductivity is improved, but copper diffusion contaminates semiconductor well regions and interlayer insulating films
Solution Approach 1:
A barrier metal layer is introduced as an intermediary between the copper conductive member and the semiconductor/insulator layers. This barrier metal prevents copper diffusion into the semiconductor well region and interlayer insulating film while maintaining electrical conductivity, thus resolving the contradiction between conductivity and contamination prevention
Solution Approach 2:
The conductive member is constructed as a composite structure combining copper (for high conductivity) with barrier metal materials (for diffusion prevention). This composite approach allows simultaneous achievement of excellent electrical properties and contamination resistance
2Reliability
If copper is used for inter-substrate wiring, then conductivity is improved, but device operation reliability deteriorates due to contamination
Solution Approach 1:
The barrier metal layer serves as a protective intermediary that blocks copper atoms from migrating into the semiconductor well region and interlayer insulating film, preventing contamination that would compromise device operation reliability while preserving the high conductivity benefits of copper
Solution Approach 2:
The barrier metal layer is pre-applied before copper deposition to establish a diffusion barrier in advance, preventing copper contamination before it can occur during subsequent processing or operation, thus ensuring operational reliability from the outset
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution effectively restricts copper diffusion, reducing contamination and ensuring reliable operation and performance of semiconductor apparatuses by using a conductive member with a copper region and a diffusion barrier region.
Implementation Method 1
A diffusion coefficient of the copper to the material is lower than a diffusion coefficient of the copper to the first semiconductor layer and a diffusion coefficient of the copper to the first insulator layer
Data Source
AI summary
A semiconductor apparatus includes a conductive member penetrating through a first semiconductor layer, a first insulator layer, and a third insulator layer, and connecting a first conductor layer with a second conductor layer. The conductive member has a first region containing copper, and a second region containing a material different from the copper is located at least between a first region and the first semiconductor layer, between the first region and the first insulator layer, and between the first region and the third insulator layer. A diffusion coefficient of the copper to a material is lower than a diffusion coefficient of the copper to the first semiconductor layer and a diffusion coefficient of the copper to the first insulator layer.