Semiconductor Core Feature Densification for Deep Opening Etching
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Solution Overview
Problem
The miniaturization of semiconductor structures poses challenges in achieving deep enough openings between features, leading to insufficient etching and impacting the reliability and performance of semiconductor devices, as existing methods without densification treatment result in shallow openings due to the consumption of second core features during spacer layer removal.
Innovation Solution
A method involving the formation of first and second core features with a spacer layer, followed by a densification treatment on the second core features, allowing for the differentiation of etching rates and enabling the formation of deep openings between features without impacting the profiles of the second core features during spacer layer removal.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If photolithography techniques are used to define structures, then the integrated circuit layout can be transferred from photomask to target layer, but the semiconductor structure and feature sizes become finer and more miniaturized, placing ever-greater demands on the techniques used to form the structures
Solution Approach 1:
The process is segmented into multiple stages: forming first core features, depositing spacer layer, forming second core features, performing densification treatment, and selective removal. This segmentation allows each stage to be optimized independently for precision while managing overall process complexity.
Solution Approach 2:
The densification treatment is performed preliminarily on the second core features before spacer layer removal. This preliminary action modifies the etching rate of the second core features in advance, ensuring they maintain their profiles during the subsequent removal process and enabling formation of deep openings with sufficient etching.
2Ease of manufacture
If existing methods without densification treatment are used, then the process is simpler, but the openings formed are shallow due to consumption of second core features during spacer layer removal, leading to insufficient etching
Solution Approach 1:
The densification treatment changes the physical or chemical parameters of the second core features, specifically modifying their etching rate. This parameter change allows the second core features to resist etching during spacer layer removal, enabling formation of deep openings with sufficient etching depth while maintaining process feasibility.
3Manufacturing precision
If densification treatment is performed on second core features, then deep openings with clear profiles can be formed, but the process complexity increases
Solution Approach 1:
The densification treatment acts as an intermediary step between forming the second core features and removing the spacer layer. This intermediary process modifies the second core features to create a differential etching rate, serving as a bridge that enables subsequent formation of deep openings with clear profiles while differentiating etching behavior between first and second core features.
4Productivity
If the spacer layer is removed without densification treatment, then the process is faster, but the second core features are consumed and their profiles are impacted, resulting in shallow openings
Solution Approach 1:
The densification treatment applies a preliminary anti-action by modifying the second core features to resist consumption during spacer layer removal. This pre-protection ensures that when the spacer layer is subsequently removed, the second core features maintain their profiles and the openings achieve sufficient depth, thereby ensuring device reliability.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach ensures the formation of deep and clear openings, enabling the creation of fine semiconductor structures with improved reliability and performance by maintaining the integrity of the second core features during spacer layer removal.
Implementation Method 1
A densification treatment is performed on the second core features, and the spacer layer is removed to form a plurality of openings between the first core features and the second core features
Implementation Method 2
the densification treatment includes UV curing or thermal treatment
Data Source
AI summary
The present disclosure provides a method for preparing semiconductor structures. The method includes the following steps: A substrate is provided. A plurality of first core features spaced apart from each other is formed over the substrate. A spacer layer is formed over the first core features, and the spacer layer is formed to cover sidewalls and top surfaces of each first core feature. A plurality of second core features is formed over the substrate, and portions of the spacer layer are exposed through the second core features. A densification treatment is performed on the second core features, and the spacer layer is removed to form a plurality of openings between the first core features and the second core features.