Semiconductor Device Corner Overvoltage Protection Diode Layout
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Solution Overview
Problem
Conventional semiconductor devices with overvoltage protection diodes have a large connection region, which reduces the active region where main electric current flows, limiting their efficiency.
Innovation Solution
The overvoltage protection diode is positioned at a corner portion of the semiconductor substrate and extends towards the center, allowing for a reduced connection region and an enlarged active region, with adjustable layer widths, shapes, and carrier concentrations to enhance performance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Area of stationary object
If the overvoltage protection diode is provided protruding from side portion to center portion of semiconductor substrate, then the connection region is large enough to connect conductors, but the active region becomes small accordingly
Solution Approach 1:
The overvoltage protection diode is configured with asymmetric placement at the corner portion of the semiconductor substrate rather than extending from the side portion. This asymmetric corner placement optimizes space utilization and allows the active region to extend further across the substrate area, thereby increasing the active region area while maintaining adequate connection region through the corner-based layout
Solution Approach 2:
The invention transitions from a side-portion-to-center linear extension to a corner-to-center diagonal extension, utilizing the corner dimension more effectively. This dimensional repositioning allows better space distribution between the connection region and active region, maximizing the active region area while preserving connection functionality
2Device complexity
If the connection region is enlarged to connect conductors to overvoltage protection diode, then the device structure is simplified, but the active region for main electric current flow is reduced
Solution Approach 1:
By placing the overvoltage protection diode at the corner portion rather than extending from the side, the connection structure achieves a more efficient spatial arrangement. This asymmetric corner placement reduces the overall connection path length and simplifies conductor routing while maximizing the remaining area for the active region
3Area of moving object
If the overvoltage protection diode extends from corner portion toward center portion, then the active region is enlarged, but the connection region area is reduced
Solution Approach 1:
The corner portion placement creates an asymmetric configuration that efficiently partitions the substrate area. This allows the active region to occupy the majority of the central and peripheral areas while the connection region is concentrated at the corner, achieving optimal area distribution
Solution Approach 2:
The connection region is localized to the corner portion where the overvoltage protection diode is placed, concentrating the connection functionality in a specific local area. This local concentration allows the rest of the substrate to be optimized for the active region, achieving high active region area while maintaining connection capability
Data Source
AI summary
A semiconductor device of an embodiment includes an overvoltage protection diode in which an N-type semiconductor layer and a P-type semiconductor layer, formed on an insulating film in a voltage supporting region, are alternately disposed adjacently to each other. The overvoltage protection diode is disposed at a corner portion on the upper face of the insulating film, and extends from the corner portion to the center portion of the semiconductor substrate.