Semiconductor Corner Doping to Control Oxidation Chamfer Loss
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Solution Overview
Problem
The miniaturization of semiconductor structures leads to excessive substrate material consumption during manufacturing, causing performance defects like electric leakage due to faster oxidation rates at corner regions, resulting in larger chamfers and structural integrity issues.
Innovation Solution
Implanting doping ions into the corner regions of semiconductor substrates to slow down the oxidation rate, thereby reducing the thickness of the oxide film and minimizing material consumption during etching and cleaning processes.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Volume of moving object
If miniaturization of semiconductor structure is pursued, then device size is reduced, but substrate material consumption increases significantly
Solution Approach 1:
The patent applies local quality by selectively modifying corner regions with doping ions to create localized oxidation resistance. This targeted approach protects only the vulnerable corner areas without affecting the rest of the substrate, thereby reducing overall material consumption while enabling continued miniaturization.
Solution Approach 2:
The doping process is performed as a preliminary action before etching and cleaning operations. By pre-implanting doping ions into corner regions, the patent prepares protective zones in advance that slow down oxidation during subsequent processing, preventing excessive material consumption before it occurs.
2Productivity
If etching and cleaning processes are performed on bottom substrates, then manufacturing progress is achieved, but substrate material is consumed and film peeling occurs
Solution Approach 1:
The patent selectively protects corner regions through localized doping, creating areas with different oxidation characteristics. This allows standard etching and cleaning processes to proceed on the bulk substrate while corner regions resist excessive oxidation, maintaining manufacturing progress without proportional material loss.
Solution Approach 2:
The doping process creates a preliminary protective effect against oxidation before etching and cleaning operations. This pre-established resistance counteracts the harmful oxidation that would otherwise occur during these necessary manufacturing steps, preventing material consumption and film peeling.
3Ease of operation
If corner regions are exposed during removing process, then oxidation occurs at corner regions, but this causes larger chamfers and structural integrity issues
Solution Approach 1:
The patent creates localized quality differences by doping only corner regions, giving them distinct oxidation resistance properties compared to the bulk substrate. This allows the removing process to access corner regions effectively while the doped areas resist excessive oxidation, preventing chamfer enlargement and maintaining structural integrity.
Solution Approach 2:
The patent converts the harmful effect of oxidation into a beneficial selective process. By doping corner regions, oxidation is slowed down in these areas during removing operations, transforming what would be a harmful uniform oxidation into a controlled selective process that protects corner integrity while allowing necessary material removal.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach effectively reduces the size of chamfers, enhances the structural integrity of corner regions, and prevents electric leakage by controlling the oxidation rate, ensuring better performance and reliability of semiconductor structures.
Implementation Method 1
A doping process is performed, to implant doping ions into the corner regions, the doping ions are configured to slow down the oxidation rate of the corner regions
Implementation Method 2
the doping ions are configured to slow down the oxidation rate of the corner regions
Data Source
AI summary
Provided are a semiconductor structure and a manufacturing method thereof. The manufacturing method for the semiconductor structure comprises: providing a substrate, wherein the substrate comprises active regions and isolation regions each located between the adjacent active regions, and each of the active regions comprises corner regions adjacent to the isolation regions; performing a doping process to implant doping ions into the corner regions, wherein the doping ions are configured to slow down an oxidation rate of the corner regions; and performing a removing process to remove the oxidized portion of the substrate after the doping process, wherein during the removing process, a side wall of each of the corner regions is exposed from a structure in the isolation region.