Counter-Doping Region Mitigates Reverse Short Channel Effect in Semiconductor Devices
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Solution Overview
Problem
Semiconductor devices face challenges with increasing geometric dimensions leading to reverse short channel effects and leakage current, which affect device lifespan and threshold voltage, making it difficult to design and manufacture efficient devices.
Innovation Solution
A semiconductor device is designed with a counter-doping region in the substrate below the gate structure, adjacent to the lightly doped source/drain region and halo implant region, where the dopant concentration of the counter-doping region is lower than the halo implant region, and positive charges are formed in the gate dielectric layer to reduce threshold voltage and leakage current.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Object-generated harmful factors
If the dopant concentration of the well region is increased to reduce leakage current, then leakage current is reduced, but the threshold voltage increases
Solution Approach 1:
The patent applies local quality by creating a counter-doping region with specific dopant concentration positioned between the halo implant region and the lightly doped source/drain region. This localized doping structure allows different regions to have different dopant concentrations, enabling leakage current reduction in the well region without causing threshold voltage increase in the channel region.
2Reliability
If the reverse short channel effect is severe, then the difference between threshold voltage of short channel device and long channel device increases, but device design difficulty increases
Solution Approach 1:
The patent employs parameter changes by carefully controlling the dopant concentration of the counter-doping region to be lower than that of the halo implant region. This parameter optimization reduces the reverse short channel effect and minimizes the threshold voltage difference between short channel and long channel devices, thereby reducing design difficulty while maintaining reliability.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution effectively reduces the reverse short channel effect and leakage current, maintaining device performance while avoiding increases in threshold voltage, thereby enhancing the design and manufacturing of semiconductor devices.
Implementation Method 1
a counter-doping region formed in the semiconductor substrate below the gate structure and between the lightly doped source/drain region and the halo implant region
Implementation Method 2
halo implant region formed in the semiconductor substrate below the gate structure
Data Source
AI summary
The present disclosure relates to a semiconductor device. The semiconductor device includes a gate structure disposed on a semiconductor substrate, a sidewall spacer disposed on sidewalls of the gate structure, a lightly-doped source/drain region formed in the semiconductor substrate on opposite sides of the gate structure, a source/drain region formed in the semiconductor substrate on opposite sides of the sidewall spacer, a halo implant region formed in the semiconductor substrate below the gate structure and adjacent to the lightly-doped source/drain region, and a counter-doping region formed in the semiconductor substrate below the gate structure and between the lightly-doped source/drain region and the halo implant region. The dopant concentration of the counter-doping region is lower than the dopant concentration of the halo implant region.