Semiconductor Crack Detection Line With Deep-Buried Sensing Region
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Existing crack detectors in electronic chips, particularly those manufactured on semiconductor substrates, are ineffective in detecting cracks that propagate from the edge to the internal circuits and cannot identify cracks below the first metallization level, leading to potential failure of the electronic circuits.
Innovation Solution
A crack detection device comprising a first conductive line with segments of different metallization levels and a deep-buried conducting region, connected through semiconductor structures, allowing for crack detection in both the interconnection structure and the semiconductor substrate, including a detection circuit to measure electrical resistance changes.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If a crack detector is positioned within a sealing ring at the chip's edge, then it can detect cracks propagating from the edge, but it cannot detect cracks below the first metallization level
Solution Approach 1:
The patent transitions from surface-level crack detection to subsurface detection by extending the conductive line into the bulk semiconductor substrate. The deep-buried conducting region is positioned at a depth greater than the first metallization level, enabling detection in the vertical dimension below previously accessible layers.
Solution Approach 2:
The patent introduces a deep-buried conducting region as an intermediary element that mediates between the surface crack detector and the subsurface semiconductor structures. This buried region serves as a sensing element that detects cracks in the bulk material and transmits this information to the surface for measurement.
2Ease of manufacture
If the conductive line is placed only in the interconnection structure, then it is easy to manufacture, but it cannot detect cracks in the semiconductor substrate
Solution Approach 1:
The conductive line is segmented into multiple portions: a first portion in the interconnection structure and a second portion in the semiconductor substrate. This segmentation allows the detector to cover both the interconnection layer and the substrate, improving reliability while maintaining manufacturability through standardized fabrication processes.
Solution Approach 2:
The crack detection structure is nested within the existing semiconductor device architecture. The deep-buried conducting region is integrated into the semiconductor substrate beneath the interconnection structure, allowing the detector to be embedded within the device rather than added as a separate component.
3Measurement precision
If deep-buried conducting regions are added for subsurface detection, then crack detection coverage improves, but manufacturing complexity increases
Solution Approach 1:
The deep-buried conducting regions are formed during the preliminary fabrication stages of the semiconductor device, before final assembly. This preliminary action allows the detection structure to be integrated into the substrate during standard manufacturing processes without requiring additional complex steps after device completion.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The device effectively detects cracks in the semiconductor substrate and interconnection structure, providing early detection of potential failures and preventing propagation to the electronic circuits, enhancing the reliability of electronic chips.
Implementation Method 1
A crack detection device adapted to detect a crack in an electronic chip, the crack detection device comprising a first conductive line for detecting a crack in at least one semiconductor structure located in, and/or on, a semiconductor substrate
Data Source
Figure 1A
Figure 1B~1C
Figure 2
AI summary
The present description relates to a crack detection device (200) adapted to detect a crack in an electronic chip, the crack detection device comprising a first conductive line (201) for detecting a crack in a semiconductor structure (210) located in, and/or on, a semiconductor substrate (211), an interconnection structure (220) being connected to a first face (210A) of the semiconductor structure, the first conductive line being included in the interconnection structure and in the semiconductor structure, and comprising: - at least a first conductive segment (221A) and at least a second conductive segment (221B) of a first metallization level (M1) of the interconnection structure electrically isolated from each other by an insulating layer (223);- a conductive region buried deep within the semiconductor structure, said buried conductive region being connected to at least one first conducting segment and at least one second conducting segment; - an insulating region (215) positioned between the first face of the semiconductor structure and the buried conductive region.