Semiconductor Crack-Detecting Structure with Insulating Stacks
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Solution Overview
Problem
Semiconductor devices face challenges in detecting cracks during production and operation, which affects their quality, yield, and reliability.
Innovation Solution
A semiconductor device with a crack-detecting structure comprising insulating stacks, conductive layers, and filler layers, along with stress-dissipating structures and a guard structure, is designed to detect cracks electrically by testing electrical characteristics.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If visual inspection methods are used to detect cracks, then detection can be performed, but manufacturing efficiency decreases and costs increase
Solution Approach 1:
The patent replaces visual inspection methods with an electrical detection system. Crack-detecting structures consisting of conductive layers and insulating stacks are integrated into the semiconductor device, allowing cracks to be detected through electrical characteristic measurements rather than visual examination. This substitution of mechanical/optical inspection with electrical measurement improves manufacturing efficiency while maintaining detection capability.
Solution Approach 2:
The crack-detecting structures are formed during the manufacturing process itself, before the device is completed and shipped. The conductive layers and insulating stacks are deposited and patterned as part of the standard fabrication sequence, so that detection capability is built in advance rather than requiring separate inspection steps later.
2Productivity
If crack-detecting structures are integrated into the semiconductor device, then detection efficiency improves, but device complexity increases
Solution Approach 1:
The crack-detecting structures serve multiple functions: they provide electrical pathways for signal transmission, act as stress-dissipating elements, and enable crack detection through their electrical characteristics. The conductive layers and insulating stacks are not separate add-on components but are integrated into the device architecture to perform both functional and detection roles simultaneously.
Solution Approach 2:
The detection functionality is merged with the existing device structure. The crack-detecting structures are formed using the same deposition and patterning processes as the functional conductive layers, combining the detection system with the device fabrication flow rather than requiring separate manufacturing steps.
3Reliability
If stress-dissipating structures are added next to crack-detecting structures, then reliability improves, but manufacturing complexity increases
Solution Approach 1:
The stress-dissipating structures are segmented into discrete elements positioned at specific locations around the crack-detecting structures. Rather than a continuous complex structure, the stress management function is divided into multiple simple, repeatable units that can be fabricated using standard patterning processes.
Data Source
AI summary
The present application discloses a semiconductor device and a method for fabricating the semiconductor device. The semiconductor device includes a substrate; a first crack-detecting structure positioned in the substrate and including a first insulating stack inwardly positioned in the substrate, a first bottom conductive layer positioned on the first insulating stack, and a first filler layer positioned on the first bottom conductive layer; and a second crack-detecting structure positioned adjacent to the first crack-detecting structure and including a second insulating stack inwardly positioned in the substrate, a second bottom conductive layer positioned on the second insulating stack, and a second filler layer positioned on the second bottom conductive layer.