Semiconductor Crack-Resisting Ring Structure

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Solution Overview

Problem

Existing semiconductor devices face challenges in preventing cracks caused by mechanical stress during the dicing process from spreading into the circuit region, which can lead to leakage, disconnection, and damage to the device.

Innovation Solution

A semiconductor device configuration that includes a seal ring annularly disposed outside the circuit region, an uppermost layer wiring, and a protective film that covers the seal ring and wiring layer, forming a step structure to direct cracks away from the circuit region. The uppermost layer wiring extends beyond the seal rings, creating a region with no wiring to further strain the interlayer insulating layer and prevent crack propagation.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If seal rings are added to prevent crack spread, then crack resistance is improved, but device complexity increases

Engineering Contradiction:
Improvecrack resistanceVSAvoidstructure complexity
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

The patent implements nested seal rings where an inner seal ring is disposed within the outer seal ring, both penetrating through multiple interlayer insulating films. This nested configuration provides enhanced crack resistance through multiple protective barriers while maintaining a compact structure that minimizes additional complexity.

Inventive Principle:
Principle #7Nested doll (Nesting)

Solution Approach 2:

The patent divides the seal ring structure into multiple segments including an outer seal ring, an inner seal ring, and connection portions that connect them. This segmentation allows each component to perform specific functions (moisture prevention, crack resistance) while enabling modular manufacturing and assembly processes.

Inventive Principle:
Principle #1Segmentation

2Reliability

If multiple seal rings are connected to prevent moisture entry, then reliability is improved, but manufacturing complexity increases

Engineering Contradiction:
Improvemoisture preventionVSAvoidmanufacturing complexity
Core Design Contradiction:
ReliabilityVSEase of manufacture

Solution Approach 1:

The patent merges the functions of multiple seal rings and connection portions into a single integrated structure formed through coordinated etching and filling processes. The outer seal ring, inner seal ring, and connection portions are manufactured as a unified component system, reducing the number of separate manufacturing steps and improving ease of manufacture while maintaining moisture prevention capability.

Inventive Principle:
Principle #5Merging (Combining)

3Reliability

If dummy patterns are added to reinforce interlayer insulating film, then crack resistance is improved, but device complexity increases

Engineering Contradiction:
Improvecrack resistanceVSAvoidstructure complexity
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

The patent makes the seal rings serve multiple functions: they act as moisture barriers, crack prevention structures, and mechanical reinforcement for the interlayer insulating films. By赋予 the seal rings these multiple functions, the patent avoids adding separate dummy patterns, thereby improving crack resistance without increasing device complexity.

Inventive Principle:
Principle #6Universality (Multi-functionality)

Data Source

PatentUS9559063B2Semiconductor device having crack-resisting ring structure and manufacturing method thereof
Publication Date: 2017.01.31 RENESAS ELECTRONICS CORP
  • US9559063B2 patent drawing
  • US9559063B2 patent drawing
  • US9559063B2 patent drawing

AI summary

A semiconductor device includes an interlayer insulating layer disposed over a semiconductor substrate, and including a plurality of wiring layers; a seal ring disposed in the interlayer insulating layer, and surrounding a circuit region of the semiconductor substrate; a crack lead ring disposed in the interlayer insulating layer, and surrounding the seal ring; and a protective film disposed over the interlayer insulating layer, and covering the crack lead ring and the seal ring. The crack lead ring includes an uppermost wiring layer in an uppermost layer of a plurality of wiring layers. When the crack lead ring has a wiring in an underlayer below the uppermost layer, the uppermost layer wiring extends towards the outside of the device, relative to the wiring in the underlayer. The protective film has an end overlapped with an end of the uppermost layer wiring to form a step over the interlayer insulating layer.