Semiconductor Device Crack Suppression via Slot Segmentation
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Solution Overview
Problem
Semiconductor chips face issues with cracks and chipping during dicing due to nitride films, and existing solutions fail to simultaneously suppress cracks and maintain the flatness of the laminated structure on the uppermost layer.
Innovation Solution
A semiconductor device and manufacturing method that include a semiconductor substrate with a non-element region featuring top-layer metal wiring, a flattening film covering the metal wiring, and a protecting film, where a removed part is formed by removing the protecting film to create a level difference, thereby suppressing crack propagation and maintaining flatness.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a nitride film is formed as a passivation film during dicing, then protection of the semiconductor wafer is improved, but cracks or chipping occur in the nitride film during cutting
Solution Approach 1:
The patent introduces slots that divide the continuous nitride film into segmented regions. These slots act as crack arrestors, preventing cracks from propagating across the entire wafer during dicing. The nitride film is maintained in regions between slots, providing localized protection while the slots prevent catastrophic failure.
Solution Approach 2:
The patent creates different structural qualities in different regions: continuous nitride film in protected regions and discontinuous slots in cutting regions. This local variation allows the structure to provide protection where needed while accommodating the mechanical stresses of dicing through the slot regions.
2Strength
If slots are formed in the dicing region to suppress crack propagation, then crack resistance is improved, but the flatness of the laminated structure on the uppermost layer is degraded
Solution Approach 1:
The patent adds a vertical dimension to compensate for the horizontal discontinuities created by slots. By forming a flattening film that spans across the slot regions, the structure restores flatness in the vertical plane, enabling subsequent lithography and processing steps to proceed without interference despite the presence of slots.
Solution Approach 2:
The flattening film acts as an intermediary layer that bridges the gaps created by slots. This intermediate structure maintains the required flatness for uppermost layer processing while allowing the slots to perform their crack-arresting function at lower levels.
3Manufacturing precision
If a flattening film is formed to maintain flatness, then flatness of the laminated structure is improved, but the structure becomes more complex
Solution Approach 1:
The flattening film serves multiple functions simultaneously: it restores flatness degraded by slot formation, provides a uniform base for subsequent lithography patterns, and acts as a structural bridge across slot regions. This multi-functionality justifies the additional layer despite increased complexity.
Data Source
AI summary
There are provided a highly reliable semiconductor device capable of suppressing occurrence of cracks as well as securing flatness and a manufacturing method therefor. The semiconductor device includes: a semiconductor substrate; an element region; and a non-element region. The non-element region includes: a top-layer metal wiring in a top layer of metal wirings formed in the non-element region; a flattening film covering an upper surface of the top-layer metal wiring; and a protecting film formed over the flattening film. A removed part where the protecting film is removed is formed in at least part of the non-element region.