Semiconductor Package Insulation Layout for Creepage Distance
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Solution Overview
Problem
The existing semiconductor devices face a reduction in insulation withstand voltage due to the proximity of the heat radiator, which is typically made of metal, leading to a short creepage distance and potential insulation issues.
Innovation Solution
The semiconductor device incorporates an insulative layer stacked on a heat dissipation member, with a conductive layer bonded to the insulative layer, and semiconductor elements connected to the conductive layer, where the insulative layer extends beyond the conductive layer, increasing the creepage distance and enhancing insulation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Temperature
If the heat radiator is placed close to the semiconductor device for effective cooling, then heat dissipation performance is improved, but the creepage distance is reduced and insulation withstand voltage deteriorates
Solution Approach 1:
An insulating layer is introduced as an intermediary component between the semiconductor device and the heat radiator. This insulating layer maintains the close proximity needed for effective thermal coupling while providing electrical insulation to prevent leakage currents, thus resolving the contradiction between heat dissipation performance and insulation withstand voltage
Solution Approach 2:
The heat dissipation structure employs composite materials including conductive portions for thermal coupling and insulating portions for electrical isolation. This composite approach allows simultaneous achievement of high heat transfer efficiency and adequate insulation performance by combining materials with complementary properties
2Temperature
If the heat radiator is made of metal for high thermal conductivity, then heat conduction is improved, but the risk of leakage currents and insulation issues increases
Solution Approach 1:
The heat radiator is segmented into conductive portions that contact the semiconductor device for efficient heat transfer and insulating portions that prevent leakage currents. This segmentation allows the metal heat radiator to maintain high thermal conductivity where needed while isolating harmful electrical effects in other regions
Solution Approach 2:
An insulating layer serves as a mediator between the metal heat radiator and the semiconductor device, allowing thermal energy to pass through while blocking electrical current paths, thus enabling the use of highly conductive metal without generating leakage currents
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration improves the insulation withstand voltage by increasing the creepage distance and facilitating better heat conduction, thereby preventing leakage currents and enhancing the overall insulation performance.
Implementation Method 1
an insulative layer located on one side of a first direction with respect to the heat dissipation member and stacked on the heat dissipation member
Implementation Method 2
a heat dissipation member; a conductive layer located on an opposite side of the first direction with respect to the insulative layer and bonded to the insulative layer
Data Source
AI summary
A semiconductor device comprises a heat dissipation member, an insulative layer, a conductive layer and a semiconductor element. The insulative layer is located on one side of the first direction with respect to the heat dissipation member and stacked on the heat dissipation member. The conductive layer is located on the opposite side of the heat dissipation member with respect to the insulative layer and bonded to the insulative layer. The semiconductor element is bonded to the conductive layer. The semiconductor element is electrically connected to the conductive layer. The insulative layer extends outside the conductive layer as viewed in the first direction.