Semiconductor Device Crossing Region Layout
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Solution Overview
Problem
High power, high frequency semiconductor devices require smaller chip sizes for increased integration and reduced costs, but existing designs struggle to achieve this while maintaining performance.
Innovation Solution
The semiconductor device design includes multiple current-carrying and control electrodes configured to support current flow in specific directions, with active areas and isolation regions on a semiconductor substrate, allowing for a compact layout that optimizes chip area usage.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Area of stationary object
If conventional semiconductor device layouts are used, then device performance can be maintained, but chip size remains large
Solution Approach 1:
The patent applies dimensionality change by implementing crossing regions where electrodes from different directions intersect and share common contact regions. This allows current paths to cross without requiring additional lateral space, effectively utilizing the vertical dimension of electrode stacking to reduce the planar chip footprint while maintaining electrical performance
2Area of stationary object
If chip size is reduced for higher integration, then cost decreases, but device performance may deteriorate
Solution Approach 1:
The patent merges multiple electrode functions into shared crossing regions where a single contact region serves multiple current paths simultaneously. This consolidation reduces the total electrode area required while maintaining the ability to support high power operations through optimized current distribution across the merged regions
3Area of stationary object
If electrode density is increased for compact layout, then chip area is reduced, but manufacturing complexity increases
Solution Approach 1:
The patent segments the electrode layout into distinct linear regions that intersect at standardized crossing points. This segmentation allows complex multi-directional current paths to be constructed from simpler modular segments, reducing manufacturing complexity while achieving compact chip area through systematic arrangement
Data Source
AI summary
A semiconductor device includes a semiconductor substrate, a first current-carrying electrode, a second current-carrying electrode, a first control electrode disposed between the first current-carrying electrode and the second current-carrying electrode, a third current-carrying electrode electrically coupled to the first current-carrying electrode, and a fourth current-carrying electrode adjacent the third current-carrying electrode. The third current-carrying electrode and the fourth current-carrying electrode are configured to support current flow from the third current-carrying electrode to the fourth current-carrying electrode parallel to a second direction. The fourth current-carrying element is electrically coupled to the second current-carrying electrode and a second control electrode. The second control electrode is electrically coupled to the first control electrode. A first crossing region is electrically coupled to the first control electrode and a second crossing region is electrically coupled to the fourth current-carrying electrode, wherein the second crossing region crosses a portion of the first crossing region.