Semiconductor Thin Film Crystallization via Metal Element Transfer
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Solution Overview
Problem
Existing methods for manufacturing crystalline semiconductor thin films, such as those used in liquid crystal display devices, face challenges in controlling the positions and diameters of Si crystal grains, leading to variations in electric properties like carrier mobility and threshold voltages, and are costly due to complex mask-making processes.
Innovation Solution
A method involving a transcriptional body with a metal element solution is used to selectively apply and transfer the metal element onto an amorphous semiconductor thin film, acting as crystal nucleuses for controlled crystallization, eliminating the need for complex mask processes and ensuring uniform crystal grain positions and diameters.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If energy beams are illuminated onto the amorphous Si thin film on a flat transparent quartz substrate, then the amorphous Si thin film is fused and solidified into a crystalline Si thin film, but the positions and diameters of Si crystal grains cannot be controlled
Solution Approach 1:
The patent applies a solution containing metal elements (such as Ni, Co, or Fe) to the amorphous Si thin film before the crystallization process. This preliminary introduction of metal elements as crystal nucleuses enables controlled crystal grain formation at specific positions with desired diameters, eliminating the need for complex mask-making processes while achieving precise control over crystal grain characteristics
Solution Approach 2:
The patent uses metal elements (Ni, Co, or Fe) as intermediary substances that facilitate controlled crystallization. These metal elements act as crystal nucleuses that mediate the transformation from amorphous to crystalline structure, enabling precise control of crystal grain positions and diameters without requiring complex masking procedures
2Manufacturing precision
If a masking material is deposited and photolithography is used to selectively apply metal element solution, then crystal grains can be formed at predetermined positions, but the number of manufacturing processes increases and productivity decreases
Solution Approach 1:
The patent extracts and eliminates the complex mask-making processes (deposition of masking material, photo-resist film application, exposure, development, and etching) from the manufacturing flow. By directly applying the metal element solution to the amorphous Si thin film without these intermediate masking steps, the patent maintains precise control over crystal grain positions while significantly improving productivity and reducing manufacturing costs
3Reliability
If energy beams are illuminated onto the amorphous Si thin film, then crystalline Si thin film is produced, but variations in electric properties such as carrier mobility and threshold voltages occur due to inconsistent crystal grain characteristics
Solution Approach 1:
The patent introduces metal elements that selectively promote crystallization at specific locations on the amorphous Si thin film. By controlling where these metal element-containing solutions are applied, the patent creates localized crystal nucleuses that ensure consistent crystal grain positions and diameters across different regions (source regions, channel forming regions, and drain regions), thereby reducing variations in electric properties such as carrier mobility and threshold voltages
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach allows for reliable control of crystal grain positions and diameters, reducing variations in electric properties and manufacturing costs by simplifying the process, resulting in improved performance and productivity of liquid crystal display devices.
Implementation Method 1
transferring the metal element onto the semiconductor thin film; and fusing the semiconductor thin film and crystallizing the semiconductor thin film using the metal element of the solution as crystal producing nucleuses
Implementation Method 2
Energy beams are illuminated onto the amorphous semiconductor thin film in order to change amorphous properties to crystal properties, so that a crystalline semiconductor thin film will be formed. Specifically, the amorphous semiconductor thin film is fused by energy beams, is solidified
Data Source
AI summary
A semiconductor thin film manufacturing method includes: forming a semiconductor thin film on a substrate; forming a transcriptional body containing a metal element on a part thereof; bringing a part of the transcriptional body into contact with the semiconductor thin film, and transferring the metal element onto the semiconductor thin film; and fusing the semiconductor thin film and crystallizing the semiconductor thin film using the metal element of the solution as crystal producing nucleuses.