Semiconductor Current Sense Region Ruggedness via Trench Gate Differentiation
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Solution Overview
Problem
Existing semiconductor devices face challenges in maintaining current sense accuracy while improving the ruggedness of the current sense region, as increased protection measures often lead to decreased current sense accuracy and increased costs due to the need for additional protection units and complex structures.
Innovation Solution
A semiconductor device design featuring a main element with a first trench gate structure and a current detecting element with a second trench gate structure, where the second trench is narrower and shallower than the first, and a diode region with breakdown voltage higher than the main element but lower than the current detecting element, allowing for improved breakdown voltage without additional protection units.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If additional protection units and complex structures are added to improve ruggedness of the current sense region, then breakdown voltage and surge resistance are improved, but current sense accuracy deteriorates and device complexity increases
Solution Approach 1:
The patent applies different trench gate structures to different regions: the main element has a first trench gate structure while the current detecting element has a second trench gate structure with different dimensions. This local differentiation allows the current sense region to have enhanced breakdown voltage through its specific trench structure without adding protection units that would interfere with current measurement accuracy.
Solution Approach 2:
The patent segments the semiconductor device into distinct functional regions with different structures: the main element region and the current detecting element region. By separating these functions and providing each with optimized structures, the patent avoids the need for additional protection units that would complicate the current sense region while maintaining both ruggedness and measurement accuracy.
2Reliability
If additional protection units are added to improve ruggedness, then breakdown voltage is improved, but device complexity and manufacturing cost increase
Solution Approach 1:
The second trench gate structure serving as the current detecting element performs multiple functions: it detects current flow and simultaneously provides enhanced breakdown voltage capability. This multi-functionality eliminates the need for separate protection units, reducing device complexity while improving ruggedness.
Solution Approach 2:
The patent changes the physical parameters of the trench gate structure in the current sense region (narrower width, shallower depth) to achieve higher breakdown voltage. By modifying structural parameters rather than adding protection units, the patent improves ruggedness without increasing device complexity.
3Reliability
If the current sense region is made more robust with additional structures, then surge resistance is improved, but manufacturing cost increases due to additional process steps
Solution Approach 1:
The patent merges the current detection function with the protection function in a single integrated structure. The second trench gate structure simultaneously serves as the current sensing element and provides surge resistance, eliminating the need for separate protection units and reducing manufacturing process steps and costs.
Data Source
AI summary
A semiconductor device in which current sensing accuracy is maintained while ruggedness of a current sensing region is improved. The semiconductor device includes a semiconductor substrate; a main element provided on the semiconductor substrate and having a first trench gate structure including a first trench disposed on a first main surface side of the semiconductor substrate; a gate insulating film disposed along an inner wall of the first trench; and a gate electrode disposed inside the first trench; and a current detecting element for detecting a current flowing into the semiconductor substrate when the main element is operating provided on the semiconductor substrate and having a second trench gate structure including a second trench disposed on the first main surface side of the semiconductor substrate; the gate insulating film disposed along an inner wall of the second trench; and the gate electrode disposed inside the second trench.