Semiconductor Layer Structure for Current Spreading and Optical Confinement
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Solution Overview
Problem
Existing semiconductor devices face challenges in achieving uniformity of optical and electrical properties, particularly in alleviating current crowding effects and heat generation, which affect emitting power and efficiency.
Innovation Solution
Incorporating a first interlayer with a specific band gap and thickness between a waveguiding layer and a cladding layer in the semiconductor structure, along with additional layers to manage current spreading and optical confinement, thereby enhancing the semiconductor device's performance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If a conventional semiconductor structure without interlayer is used, then the device complexity is low, but the current crowding effect is severe and optical-electrical uniformity is poor
Solution Approach 1:
An interlayer with specific band gap (larger than waveguiding layer, smaller than cladding layer) is introduced as an intermediary between the waveguiding layer and cladding layer. This interlayer acts as a mediator to gradually transition the band gap, enabling smooth current spreading from the contact layer through the interlayer to the waveguiding layer, thereby reducing current crowding effect and improving optical-electrical uniformity without significantly increasing device complexity
Solution Approach 2:
The band gap parameter is strategically changed by introducing an interlayer with a specific band gap value that is larger than the waveguiding layer but smaller than the cladding layer. This parameter transition creates a gradual band gap profile that facilitates current spreading while maintaining optical confinement, resolving the contradiction between uniformity and structural simplicity
2Manufacturing precision
If the interlayer thickness is increased to improve current spreading, then the current crowding effect is alleviated, but the optical confinement is weakened and threshold current increases
Solution Approach 1:
The thickness of the interlayer is precisely controlled within the range of 5-35 nm. This specific thickness parameter enables optimal balance: it is thick enough to provide sufficient lateral distance for current spreading and reduce current crowding, yet thin enough to maintain effective optical confinement through the waveguiding layer, preventing excessive threshold current increase
Solution Approach 2:
The interlayer thickness is set to a partial value (5-35 nm) rather than a full thickness that would completely block optical confinement. This partial thickness provides just enough space for current spreading while maintaining the necessary optical confinement, achieving the optimal balance between current uniformity and threshold current
3Power
If no interlayer is used, then the device structure is simple, but heat generation is severe and emitting power is limited
Solution Approach 1:
The interlayer serves as a thermal management intermediary by providing a controlled thermal transition zone between the contact layer and waveguiding layer. This intermediary structure facilitates more uniform heat distribution and dissipation, reducing localized heat generation and enabling higher emitting power without significantly increasing overall device complexity
Solution Approach 2:
The introduction of the interlayer changes the thermal conductivity parameter distribution within the device structure. This parameter modification creates a more favorable thermal gradient that reduces heat concentration in the active region, thereby enabling higher emitting power while maintaining relatively simple device architecture
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution results in improved optical and electrical uniformity, higher emitting power, and increased yield of high-power semiconductor devices, with enhanced internal quantum efficiency and reduced threshold current.
Implementation Method 1
the first interlayer directly contacting the first waveguiding layer and having a first thickness and a second bandgap lager than the first band gap
Implementation Method 2
a first waveguiding layer having a first band gap
Data Source
AI summary
A semiconductor device is provided. The semiconductor device includes a first semiconductor structure, a second semiconductor structure on the first semiconductor structure and an active structure between the first semiconductor structure and the second semiconductor structure. The first semiconductor structure includes a first waveguiding layer having a first band gap, and a first interlayer directly contacting the first waveguiding layer and having a first thickness and a second bandgap lager than the first band gap. The first thickness is 5 nm-35 nm.