Semiconductor Layer Growth via Cutting and Regrowth
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
The growth of semiconductor layers on crystal substrates often results in high densities of crystal defects, which can compromise the reliability of semiconductor devices.
Innovation Solution
A method involving the growth of a first semiconductor layer on a substrate, cutting it to minimize exposed crystal defects, and then growing a second semiconductor layer with the same material and crystal structure on the cut surface to reduce defect density, using techniques like mist chemical vapor deposition.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If a semiconductor layer is grown on a crystal substrate with different material or crystal structure, then the semiconductor layer can be formed, but high density crystal defects are generated in the grown layer
Solution Approach 1:
The patent segments the semiconductor layer growth into two distinct stages: first growing a sacrificial layer with acceptable defects on the substrate, then cutting and removing it to expose a clean substrate surface, and finally growing the target semiconductor layer on the refreshed surface. This segmentation allows the defect-prone growth process to be isolated from the defect-sensitive final layer formation.
Solution Approach 2:
The patent performs preliminary action by growing the first semiconductor layer and intentionally allowing crystal defects to form during this stage. These defects are then removed through cutting and substrate removal, preventing them from affecting the second semiconductor layer. The preliminary layer serves as a sacrificial element that protects the final layer from defect contamination.
2Manufacturing precision
If the first semiconductor layer is cut to minimize exposed defects, then fewer defects are exposed at the cut surface, but additional processing steps are required
Solution Approach 1:
The cutting operation is performed as a preliminary action before growing the second semiconductor layer. By cutting the first layer to minimize defect exposure and then removing the substrate, the patent prepares an optimally clean surface for subsequent growth. This preliminary preparation prevents defect propagation to the final layer.
Solution Approach 2:
The patent extracts the defective first semiconductor layer and the substrate itself from the final structure. After cutting to minimize defect exposure, the entire first layer and substrate are removed, taking all crystal defects with them. Only the clean-cut surface remains for growing the defect-free second layer.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach effectively minimizes crystal defect density in the second semiconductor layer, leading to the production of highly reliable semiconductor devices.
Implementation Method 1
growing a first semiconductor layer on a surface of a substrate at which a crystal layer is exposed
Implementation Method 2
growing a second semiconductor layer on the cut surface of the first semiconductor layer
Data Source
AI summary
A method of growing semiconductor layers may include: growing a first semiconductor layer on a surface of a substrate at which a crystal layer is exposed, wherein the first semiconductor layer is different from the crystal layer in at least one of a material and a crystal structure; cutting the first semiconductor layer such that a cut surface of the first semiconductor layer extends from a front surface of the first semiconductor layer to a rear surface of the first semiconductor layer; and growing a second semiconductor layer on the cut surface of the first semiconductor layer, wherein the second semiconductor layer has a material and a crystal structure that are same as those of the first semiconductor layer.