Semiconductor Device Plate-like Support for Cylindrical Electrodes
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Solution Overview
Problem
The challenge in semiconductor device manufacturing is to prevent cylindrical lower electrodes from falling down during the manufacturing process while maintaining high capacitance, as existing solutions like increasing the film thickness of supports lead to parasitic capacitance and operational issues.
Innovation Solution
A semiconductor device with a plate-like support that links to the side surface of cylindrical lower electrodes, featuring a pore portion with a circular or ellipsoidal shape, and a film thickness between 20 nm to 60 nm, ensuring mechanical stability and high capacitance without increasing parasitic capacitance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Stability of the object's composition
If the film thickness of the plate-like support is increased to prevent lower electrodes from falling down, then mechanical stability is improved, but parasitic capacitance increases and operational performance deteriorates
Solution Approach 1:
The patent applies a thin film plate-like support with film thickness of 20 nm to 60 nm that provides mechanical stability while minimizing parasitic capacitance. The thin film structure maintains sufficient strength to prevent lower electrode collapse during manufacturing processes while keeping the capacitance value low enough to allow high-speed device operation.
Solution Approach 2:
The patent optimizes the film thickness parameter of the plate-like support to a specific range (20 nm to 60 nm) that balances mechanical stability and electrical performance. By precisely controlling this parameter, the support structure provides adequate strength to prevent electrode failure while maintaining low parasitic capacitance for high-speed operation.
2Quantity of substance
If the lower electrodes are densely aligned to increase capacitance, then the superficial area of the capacitor is increased, but the lower electrodes become more prone to falling down
Solution Approach 1:
The plate-like support acts as an intermediary structure that links the side surfaces of multiple densely aligned cylindrical lower electrodes. This intermediary support structure provides mechanical stability to the densely packed electrodes, preventing them from falling down while maintaining the high density configuration that enables high capacitance.
Solution Approach 2:
The patent introduces a horizontal plate-like support structure that links lower electrodes in the lateral dimension, complementing the vertical alignment. This dimensional approach allows dense vertical alignment of electrodes for high capacitance while the horizontal support links provide the necessary mechanical stability to prevent collapse.
3Quantity of substance
If the aspect ratio of the lower electrode is enhanced to increase capacitance, then the superficial area is increased, but the lower electrode becomes more unstable and may fall down
Solution Approach 1:
The thin film plate-like support (20 nm to 60 nm thickness) provides lateral reinforcement to the high aspect ratio lower electrodes without significantly increasing parasitic capacitance. The support structure compensates for the reduced structural strength of thin-walled high aspect ratio electrodes, enabling them to maintain stability while achieving high capacitance through increased superficial area.
Data Source
AI summary
This semiconductor device according to the present invention includes a plurality of cylindrical lower electrodes aligned densely in a memory array region; a plate-like support which is contacted on the side surface of the cylindrical lower electrodes, and links to support the plurality of the cylindrical lower electrodes; a pore portion provided in the plate-like support; a dielectric film covering the entire surface of the cylindrical lower electrodes and the plate-like support in which the pore portion is formed; and an upper electrode formed on the surface of the dielectric film, wherein the boundary length of the part on the side surface of the cylindrical lower electrode which is exposed on the pore portion is shorter than the boundary length of the part on the side surface of the cylindrical lower electrode which is not exposed on the pore portion.