Semiconductor Dam Layer Protrusion Mitigation via Photoresist Support
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Solution Overview
Problem
The existing semiconductor manufacturing process faces issues with the protrusion of the dam layer during wafer bonding, leading to cavity formation and increased risk of conductive layer breakage, as well as high costs associated with chemical vapor deposition and etching processes.
Innovation Solution
A semiconductor structure and manufacturing method that includes a dam layer with a protruding arc surface, where a photoresist layer is applied to fill the cavity and support the conductive layer, eliminating the need for a typical oxide layer and reducing manufacturing costs.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Strength
If the dam layer is used to bond two wafers together through high temperature and pressure, then the bonding strength is improved, but the dam layer protrudes toward the through silicon via forming cavities that cause conductive layer breakage
Solution Approach 1:
The patent applies a photoresist layer in advance before forming the conductive layer. This photoresist layer fills the cavity formed by the protruding dam layer and provides a supporting surface for the subsequent conductive layer, preventing it from breaking during bonding. The preliminary application of this protective layer resolves the contradiction by preparing the structure beforehand to withstand the bonding process.
Solution Approach 2:
The photoresist layer acts as an intermediary between the protruding dam layer and the conductive layer. It mediates the interaction by filling the harmful cavity and providing mechanical support to the conductive layer, preventing direct contact between the conductive layer and the cavity that would cause breakage during high-temperature bonding.
2Manufacturing precision
If the conventional oxide layer formation process using CVD and etching equipment is used, then the conductive pad is properly exposed, but the manufacturing cost increases due to expensive equipment usage
Solution Approach 1:
The patent replaces the expensive CVD and etching process with a more economical approach using photoresist material. Instead of using costly equipment to form and remove oxide layers, the invention uses a disposable photoresist layer that can be applied, patterned, and removed more economically, achieving the same functional result of exposing the conductive pad while reducing manufacturing costs.
Solution Approach 2:
The patent changes the process parameters from high-cost CVD/etching operations to a photoresist-based approach. By altering the manufacturing method from thermal/chemical processes requiring expensive equipment to a photochemical process using photoresist, the invention achieves comparable precision in conductive pad exposure at lower cost.
Data Source
AI summary
A semiconductor structure includes a first substrate, a second substrate, a dam layer, a photoresist layer, and a conductive layer. The first substrate has a conductive pad. The second substrate has a through via, a sidewall surface surrounding the through via, a first surface, and a second surface opposite to the first surface. The through via penetrates through the first and second surfaces. The conductive pad is aligned with the through via. The dam layer is located between the first substrate and the second surface. The dam layer protrudes toward the through via. The photoresist layer is located on the first surface, the sidewall surface, the dam layer protruding toward the through via, and between the conductive pad and the dam layer protruding toward the through via. The conductive layer is located on the photoresist layer and the conductive pad.