Semiconductor Device with Distributed Bragg Reflector Layers

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Solution Overview

Problem

Semiconductor devices face challenges in heat dissipation and power conversion efficiency due to high output and high voltage driving, leading to reduced light output and power conversion efficiency as temperature increases, necessitating effective heat dissipation methods.

Innovation Solution

A semiconductor device design featuring a first and second light emitting structure with DBR layers, electrodes, and bonding pads, along with an insulating layer and dummy light emitting structures, which allows for efficient heat dissipation and improved power conversion efficiency by emitting light in a direction perpendicular to the substrate and using a non-conductive substrate for reduced light absorption.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Power

If high output and high voltage driving are used to increase light output, then light output increases, but heat generation increases causing temperature rise which reduces power conversion efficiency

Engineering Contradiction:

Improvelight outputVSAvoidpower conversion efficiency

Core Design Contradiction:

PowerVSLoss of energy

Solution Approach 1:

The patent extracts the harmful heat from the system by introducing a dedicated heat dissipation path through the substrate. The substrate is designed with specific thermal conductivity properties to conduct heat away from the light emitting structure, separating the light generation function from heat retention, thus maintaining power conversion efficiency while achieving high light output

Inventive Principle:

Principle #2Taking out (Extraction)

Solution Approach 2:

The substrate acts as an intermediary element between the light emitting structure and the environment. It mediates heat transfer by conducting heat away from the active region while allowing light to pass through. The substrate's dual role as both a mechanical support and a thermal management component resolves the contradiction between high power output and energy efficiency

Inventive Principle:

Principle #24Intermediary (Mediator)

2Strength

If conventional substrate materials are used, then structural support is provided, but light absorption occurs reducing light extraction efficiency

Engineering Contradiction:

Improvestructural supportVSAvoidlight extraction efficiency

Core Design Contradiction:

StrengthVSIllumination intensity

Solution Approach 1:

The patent changes the optical parameter of the substrate by selecting materials with low absorption coefficients at the operating wavelength. The substrate is chosen from materials like sapphire, silicon carbide, or quartz which have high transparency in the visible or UV range, thus improving light extraction efficiency while maintaining adequate mechanical strength through proper thickness control

Inventive Principle:

Principle #35Parameter changes

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The design enhances heat dissipation and power conversion efficiency, improves light extraction efficiency, and reduces manufacturing costs while maintaining reliability.

Implementation Method 1

a first light emitting structure comprising a first DBR layer of a first conductivity type, a first active layer disposed on the first DBR layer, and a second DBR layer of a second conductivity type disposed on the first active layer

Methodology Applied

Scientific EffectDistributed Bragg Reflection: Bragg Diffraction

Implementation Method 2

Semiconductor devices are required to have high output and high voltage driving as their application fields become diverse. The temperature is increased by the heat generated in the semiconductor device due to the high output and high voltage driving of the semiconductor device

Methodology Applied

Scientific EffectThermal conduction: Conduction (thermal)

Implementation Method 3

a first active layer disposed on the first DBR layer... a second active layer disposed on the third DBR layer

Methodology Applied

Scientific EffectElectroluminescence: Electroluminescence

Data Source

PatentUS11637227B2Semiconductor device including multiple distributed bragg reflector layers

Publication Date: 2023.04.25 SUZHOU LEKIN SEMICON CO LTD

AI summary

A semiconductor device according to an embodiment may include a plurality of light emitting structures, a first electrode disposed around the plurality of light emitting structures, a second electrode disposed on an upper surface of the plurality of light emitting structures, a first bonding pad electrically connected to the first electrode, and a second bonding pad electrically connected to the second electrode. The plurality of light emitting structures may include a first light emitting structure that includes a first DBR layer of a first conductivity type, a first active layer disposed on the first DBR layer, and a second DBR layer of a second conductivity type disposed on the first active layer; and a second light emitting structure that includes a third DBR layer of the first conductivity type, a second active layer disposed on the third DBR layer, and a fourth DBR layer of the second conductivity type disposed on the second active layer. The first electrode may be electrically connected to the first DBR layer and the third DBR layer, and disposed between the first light emitting structure and the second light emitting structure. The second electrode may be electrically connected to the second DBR layer and the fourth DBR layer, and disposed on an upper surface of the second DBR layer and an upper surface of the fourth DBR layer.