Semiconductor Characterization via Statistical Decay Analysis

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Solution Overview

Problem

Existing analysis approaches for characterizing semiconductor samples using transient photoconductive decay techniques rely on unrealistic assumptions, leading to flawed understanding and detection of recombination parameters due to deterministic models despite random nature of carrier generation and recombination processes.

Innovation Solution

A system comprising a transient photoconductive decay measurement subsystem, data analysis subsystem, and statistical analysis subsystem that measures and analyzes voltage decay curves to extract normalized decay curves, discrete estimates of survival functions, and summary statistics, allowing for probabilistic analysis without relying on parametric models.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Device complexity

If deterministic models are used to analyze transient photoconductive decay data, then the analysis process is simplified, but the accuracy of recombination parameter detection deteriorates due to unrealistic assumptions

Engineering Contradiction:

Improveanalysis process complexityVSAvoidrecombination parameter detection accuracy

Core Design Contradiction:

Device complexityVSMeasurement precision

Solution Approach 1:

The patent replaces deterministic mathematical models with a statistical framework that uses survival functions and probability distributions to describe carrier recombination. This substitution of the analytical approach allows for accurate characterization without relying on unrealistic deterministic assumptions, resolving the contradiction between model simplicity and measurement precision.

Inventive Principle:

Principle #28Mechanics substitution (Replace mechanical system)

2Ease of operation

If parametric models are used for data analysis, then the extraction of recombination parameters becomes more straightforward, but the reliability of results deteriorates due to unrealistic assumptions about random processes

Engineering Contradiction:

Improveparameter extraction easeVSAvoidrecombination parameter reliability

Core Design Contradiction:

Ease of operationVSReliability

Solution Approach 1:

The patent changes the fundamental parameters used in analysis from deterministic model parameters to statistical parameters including survival functions, probability density functions, and cumulative distribution functions. This parameter transformation enables reliable extraction of recombination characteristics while properly accounting for the random nature of carrier generation and recombination processes.

Inventive Principle:

Principle #35Parameter changes

3Use of energy by moving object

If simplified analysis approaches are used, then the computational requirements are reduced, but the ability to detect spatial and temporal nonuniformities deteriorates

Engineering Contradiction:

Improvecomputational energy consumptionVSAvoidspatial and temporal nonuniformity detection precision

Core Design Contradiction:

Use of energy by moving objectVSMeasurement precision

Solution Approach 1:

The patent segments the semiconductor sample into multiple spatial regions and analyzes temporal decay characteristics at each region independently. By dividing the complex detection task into manageable segments, the method achieves high precision in detecting spatial and temporal nonuniformities without requiring excessive computational resources, thus resolving the contradiction between energy consumption and detection precision.

Inventive Principle:

Principle #1Segmentation

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This approach provides a more accurate characterization of semiconductor samples by accounting for random processes, reducing the impact of noise, and enabling the detection of spatial and temporal nonuniformities without unrealistic assumptions, thus improving the understanding of minority carrier behavior.

Implementation Method 1

shining light on one or more points in the semiconductor sample to generate electron hole pairs at the one or more points

Methodology Applied

Scientific EffectPhotoelectric Effect: Photoelectric Effect

Implementation Method 2

passing a current through the semiconductor sample to create a voltage across said sample

Methodology Applied

Scientific EffectOhm's Law: Ohm's Law

Data Source

PatentUS10564215B2System and method of semiconductor characterization

Publication Date: 2020.02.18 RAJA TECH

AI summary

A system for characterizing a semiconductor sample is disclosed. The system comprises a measurement subsystem, a data analysis subsystem, and a statistical analysis subsystem coupled to each other via an interconnection. The measurement subsystem excites a semiconductor sample by shining light on one or more points in the semiconductor sample to generate electron hole pairs, which creates a change in conductivity of the semiconductor sample. The measurement subsystem measures one or more voltage decay curves corresponding to the one or more points in the semiconductor sample based on the changes in conductivity, and transmits the measured voltage decay curves to the data analysis subsystem. The data analysis subsystem extracts one or more normalized decay curves from the transmitted measured voltage decay curves, which the data analysis subsystem then transmits to the statistical analysis subsystem. The statistical analysis subsystem analyzes the transmitted normalized decay curves.