Semiconductor Pattern Formation via Decomposition Gas Etching
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Solution Overview
Problem
Conventional photolithography processes are limited in forming patterns with fine pitches required for high-integrated semiconductor devices, necessitating a technique to simultaneously create patterns with various widths without increasing the number of photolithography steps.
Innovation Solution
A method involving the formation of a polymer-containing pattern, a porous layer, and a capping layer on a substrate, followed by decomposition and etching to create reduced polymer patterns and voids, which serve as masks for etching, allowing for the formation of patterns with fine pitches exceeding the resolution limits of conventional photolithography.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional photolithography process is used, then manufacturing process is simple, but pattern pitch is limited by resolution
Solution Approach 1:
The manufacturing process is segmented into multiple distinct steps: forming the initial polymer-containing pattern, depositing porous layer, supplying decomposition gas to create reduced pattern, removing porous layer to form spacer pattern, and final etching. This segmentation allows each step to be optimized independently to achieve fine pitch patterns while maintaining process control
Solution Approach 2:
The polymer-containing pattern is formed in advance as a sacrificial structure that guides subsequent pattern formation. The porous layer is deposited beforehand to enable controlled decomposition gas supply. These preliminary actions prepare the system for the precise pattern transformation that follows, allowing the final fine pitch pattern to be achieved through controlled decomposition rather than direct photolithography
2Adaptability or versatility
If multiple photolithography processes are used to form patterns with various widths, then pattern width variety is achieved, but number of photolithography steps increases
Solution Approach 1:
The decomposition gas supply is applied locally to specific regions where fine pitch patterns are required. The porous layer allows controlled gas penetration only to designated areas, enabling different pattern widths in different regions without requiring separate photolithography processes for each region. This local application of the decomposition process achieves pattern width variety while maintaining manufacturing efficiency
Solution Approach 2:
The method changes the physical and chemical parameters of the pattern formation process by using decomposition gas supply through a porous layer. By controlling decomposition conditions (gas type, temperature, pressure, duration), the same base process can produce patterns of various widths, replacing the need for multiple photolithography processes with parameter-adjusted single process
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method enables the formation of semiconductor device patterns with fine pitches and various widths in a simplified process, reducing the need for additional photolithography steps and improving productivity by lowering costs and complexity.
Implementation Method 1
supplying a decomposition gas to the polymer-containing pattern through the porous layer and decomposing a portion of the polymer-containing pattern
Implementation Method 2
decomposing a portion of the polymer-containing pattern to form a reduced polymer-containing pattern and form a void between the reduced polymer-containing pattern and the porous layer
Data Source
AI summary
In a method of manufacturing a semiconductor device, which uses a triple patterning process, a porous layer covering sidewalls and an upper surface of a polymer-containing pattern is formed on a layer to be etched. A decomposition gas is supplied to the polymer-containing pattern through the porous layer, and a portion of the polymer-containing pattern is decomposed to form a reduced polymer-containing pattern and form a void between the reduced polymer-containing pattern and the porous layer. A portion of the porous layer is removed to form a porous spacer pattern spaced apart from the reduced polymer-containing pattern. The layer to be etched is etched by using the reduced polymer-containing pattern and the porous spacer pattern as an etch mask.