Semiconductor Defect Classification via Voltage Contrast Imaging

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Solution Overview

Problem

Existing methods fail to accurately estimate electrical characteristics of defect portions in semiconductor elements due to the influence of interactions between devices on lower layers, preventing the derivation of defect types.

Innovation Solution

A system that extracts characteristics from image data acquired by sequentially irradiating patterns on a semiconductor wafer with a beam and refers to related information to derive defect types, considering the interactions between devices.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Measurement precision

If voltage contrast imaging is used to estimate electrical characteristics of defect portions, then defect detection capability is improved, but measurement precision deteriorates due to unaccounted interactions between devices on lower layers

Engineering Contradiction:

Improveelectrical characteristic estimation accuracyVSAvoidinteraction between devices on lower layers

Core Design Contradiction:

Measurement precisionVSObject-affected harmful factors

Solution Approach 1:

The patent introduces a simulation model as an intermediary between the voltage contrast image and the actual electrical characteristics. This simulation model accounts for the interactions between devices on lower layers by creating a virtual representation of the semiconductor structure and its electrical behavior, allowing accurate extraction of defect characteristics without being misled by the complex interactions present in the actual device.

Inventive Principle:

Principle #24Intermediary (Mediator)

Solution Approach 2:

The patent replaces direct physical measurement of electrical characteristics with an image-based indirect measurement system. Instead of directly measuring electrical properties that are affected by lower layer interactions, the system uses voltage contrast images and simulates the electrical characteristics from these images, substituting the complex physical measurement process with a computational simulation approach.

Inventive Principle:

Principle #28Mechanics substitution (Replace mechanical system)

2Measurement precision

If beam irradiation is applied to charge patterns for voltage contrast imaging, then defect visibility is improved, but manufacturing precision deteriorates due to charge accumulation effects

Engineering Contradiction:

Improvedefect detection accuracyVSAvoidpattern charge state control

Core Design Contradiction:

Measurement precisionVSManufacturing precision

Solution Approach 1:

The patent employs periodic beam irradiation patterns to systematically charge different portions of the semiconductor structure. By using periodic scanning and irradiation sequences, the system can control charge accumulation in a predictable manner, allowing the same pattern to be irradiated multiple times with controlled charge buildup, thereby improving defect visibility while maintaining manufacturability.

Inventive Principle:

Principle #19Periodic action

Solution Approach 2:

The patent utilizes parameter changes in beam irradiation conditions (such as beam intensity, scanning speed, and irradiation sequence) to control the charge accumulation state of patterns. By adjusting these parameters, the system optimizes the voltage contrast effect for defect detection while keeping the overall manufacturing process within acceptable precision tolerances.

Inventive Principle:

Principle #35Parameter changes

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

Enables accurate specification of defect types in semiconductor elements by analyzing brightness changes under controlled beam conditions, facilitating defect classification and manufacturing process optimization.

Implementation Method 1

a pattern is irradiated with a beam to charge the pattern

Methodology Applied

Scientific EffectElectron beam irradiation: Electron Beam

Implementation Method 2

a pattern is irradiated with a beam to charge the pattern

Methodology Applied

Scientific EffectCharging effect:

Implementation Method 3

a difference in brightness between the charged pattern and other portions is clarified

Methodology Applied

Scientific EffectBrightness contrast:

Data Source

PatentUS12394041B2System for deriving electrical characteristics and non-transitory computer-readable medium

Publication Date: 2025.08.19 HITACHI HIGH TECH CORP

AI summary

An object of the present disclosure is to provide a system for deriving a type of defect of a semiconductor element and a non-transitory computer-readable medium. The system receives, from the image acquisition tool, image data obtained by sequentially irradiating a plurality of patterns provided on the semiconductor wafer with a beam and extracts characteristics of the plurality of patterns sequentially irradiated with a beam from the received image data, the characteristics being included in the image data, or receives characteristics of the plurality of patterns sequentially irradiated with a beam from the image acquisition tool, the characteristics being extracted from the image data (Step 603), and derives (Step 605) a type of a defect by referring to (Step 604) related information for the characteristics of the plurality of patterns, the related information storing the characteristics of the plurality of patterns and types of defects in association with each other.