Semiconductor Defect Detection Using Reference Position Comparison

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Solution Overview

Problem

Current defect detection methods for semiconductor substrates face challenges in selectively identifying defects that affect circuit operation due to high detection sensitivity, leading to an increase in false positives and difficulties in distinguishing relevant defects from non-relevant ones.

Innovation Solution

A method and apparatus that compare preliminary defect positions on a semiconductor substrate with reference defect positions, acquired from repeated exposure processes and simulations, to selectively set defects as pattern defects only if they match the critical positions influencing circuit operation, using an acquisition unit, comparison unit, and set unit.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Measurement precision

If detection sensitivity is increased to detect minute defects, then the number of detected defects increases, but it becomes difficult to selectively detect only defects influencing circuit operation

Engineering Contradiction:
Improvedetection sensitivityVSAvoidselectivity of defect detection
Core Design Contradiction:
Measurement precisionVSLoss of information

Solution Approach 1:

The patent segments the defect detection process into two distinct phases: preliminary defect detection (acquiring all defects with high sensitivity) and selective defect identification (comparing with reference defect positions). This segmentation allows the system to maintain high detection sensitivity while subsequently filtering defects to identify only those influencing circuit operation, thus resolving the contradiction between detecting all defects and selecting relevant ones.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The patent performs preliminary action by acquiring reference defect positions from previous measurements or simulations before the actual defect detection process. This preliminary preparation enables the system to quickly filter and identify critical defects during the measurement phase without compromising detection sensitivity, as the reference data is already available for comparison.

Inventive Principle:
Principle #10Preliminary action

2Measurement precision

If high detection sensitivity is used, then all minute defects are detected, but false positives increase and relevant defects cannot be distinguished from non-relevant ones

Engineering Contradiction:
Improvedetection sensitivityVSAvoidaccuracy of defect relevance identification
Core Design Contradiction:
Measurement precisionVSReliability

Solution Approach 1:

The patent introduces reference defect positions as an intermediary element that mediates between the raw defect detection data and the final identification of critical defects. By comparing detected defect positions against this intermediary reference data (obtained from previous measurements or simulations), the system can reliably distinguish relevant defects from false positives while maintaining high detection sensitivity.

Inventive Principle:
Principle #24Intermediary (Mediator)

Solution Approach 2:

The patent implements feedback by using reference defect position information from previous measurements or simulations to guide and validate the current defect detection results. This feedback mechanism allows the system to continuously improve its ability to identify relevant defects by comparing new measurements against established reference patterns, thereby increasing reliability without reducing detection sensitivity.

Inventive Principle:
Principle #23Feedback

Data Source

PatentUS8055056B2Method of detecting defects of patterns on a semiconductor substrate and apparatus for performing the same
Publication Date: 2011.11.08 SAMSUNG ELECTRONICS CO LTD
  • US8055056B2 patent drawing
  • US8055056B2 patent drawing
  • US8055056B2 patent drawing

AI summary

In a method of detecting defects of patterns on a semiconductor substrate and an apparatus for performing the method information on positions of reference defects influencing an operation of a circuit including the patterns when the patterns are formed on the semiconductor substrate is acquired in advance. Preliminary defects of the patterns formed on the semiconductor substrate are detected. Positions of the preliminary defects of the patterns are compared with positions of the reference defects. The preliminary defects having the positions substantially the same as the positions of the reference defects are set to be defects of the patterns so that the actual defects are detected.