Semiconductor Defect Examination With ML-Generated Reference Images

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Solution Overview

Problem

Current defect detection methods in semiconductor manufacturing are inefficient due to high image acquisition times and processing requirements, particularly in die-to-reference detection, which affects throughput and sensitivity.

Innovation Solution

A computerized system using a machine learning model, trained on pairs of defective and defect-free images, generates a synthetic reference image to perform defect examination, reducing the need for additional image acquisition and pre-processing, thereby improving detection throughput and sensitivity.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Measurement precision

If traditional die-to-reference detection methods are used, then defect examination can be performed, but image acquisition time increases and throughput decreases

Engineering Contradiction:
Improvedefect detection sensitivityVSAvoidimage acquisition throughput
Core Design Contradiction:
Measurement precisionVSProductivity

Solution Approach 1:

The system performs preliminary action by acquiring a reference image before the runtime inspection. This pre-acquired reference image is then used during defect examination, eliminating the need to acquire reference images in real-time and significantly reducing the total image acquisition time while maintaining detection sensitivity.

Inventive Principle:
Principle #10Preliminary action

Solution Approach 2:

The patent uses a copy of the reference image (acquired in advance) instead of requiring a fresh reference image acquisition during each defect examination. This copied reference image enables rapid defect detection without the time-consuming real-time reference acquisition, thereby improving throughput while preserving measurement precision.

Inventive Principle:
Principle #26Copying

2Measurement precision

If additional image acquisition and pre-processing steps are performed, then defect examination accuracy improves, but processing time increases

Engineering Contradiction:
Improvedefect detection accuracyVSAvoidprocessing time
Core Design Contradiction:
Measurement precisionVSLoss of time

Solution Approach 1:

The system performs all necessary image acquisition and pre-processing actions in advance before runtime defect examination. The reference image is acquired and processed beforehand, so that during actual defect examination, no additional time-consuming acquisition or pre-processing is needed, thus reducing processing time while maintaining accuracy.

Inventive Principle:
Principle #10Preliminary action

Solution Approach 2:

The pre-acquired reference image serves itself by being directly utilized during defect examination without requiring additional processing steps. This self-service approach eliminates redundant processing operations and reduces overall processing time while preserving defect detection accuracy.

Inventive Principle:
Principle #25Self-service

3Reliability

If runtime reference image acquisition is performed, then defect examination can be conducted, but acquisition time increases

Engineering Contradiction:
Improvedefect examination reliabilityVSAvoidimage acquisition time
Core Design Contradiction:
ReliabilityVSLoss of time

Solution Approach 1:

The system performs the reference image acquisition in advance before runtime defect examination. This preliminary action ensures that the reference image is ready for immediate use during defect examination, eliminating the need for time-consuming real-time acquisition while maintaining the reliability of the examination process.

Inventive Principle:
Principle #10Preliminary action

Data Source

PatentUS12400319B2Defect examination on a semiconductor specimen
Publication Date: 2025.08.26 APPL MATERIALS ISRAEL LTD
  • US12400319B2 patent drawing
  • US12400319B2 patent drawing
  • US12400319B2 patent drawing

AI summary

There is provided a system and method for defect examination on a semiconductor specimen. The method comprises obtaining a runtime image of the semiconductor specimen, generating a reference image based on the runtime image using a machine learning (ML) model, and performing defect examination on the runtime image using the generated reference image. The ML model is previously trained during setup using a training set comprising one or more pairs of training images, each pair including a defective image and a corresponding defect-free image. The training comprises, for each pair, processing the defective image by the ML model to obtain a predicted image, and optimizing the ML model to minimize a difference between the predicted image and the defect-free image.