Semiconductor Element Dents for Laser Singulation
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Solution Overview
Problem
The challenge in semiconductor element production is to avoid damage and reduce bending strength loss during the singulation process, particularly when dividing test electrodes, as conventional dicing methods can cause chipping and excessive thermal effects.
Innovation Solution
A semiconductor element design featuring dents along the boundary between the principal surface and side surfaces, with a passivation film having recesses that overlap with the dents, and a method using laser irradiation to form grooves and divide test electrodes without direct contact with a dicing blade, thereby reducing thermal impact.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If a commonly used dicing blade is used for semiconductor element singulation, then the test electrode can be divided, but the semiconductor element may be chipped
Solution Approach 1:
The patent divides the test electrode into multiple segments by forming grooves that extend from the front surface toward the rear surface, but do not completely separate the electrode. This segmentation allows the test electrode to be divided for singulation while maintaining sufficient connectivity to prevent chipping of the semiconductor element during the dicing process.
Solution Approach 2:
The patent performs preliminary grooving of the test electrode before the final dicing operation. By pre-forming grooves that partially divide the test electrode and creating stress relief pathways, the subsequent dicing process can proceed without causing chipping, as the stress is already managed through the preliminary structural modifications.
2Reliability
If laser irradiation is used for semiconductor element singulation to avoid chipping, then the test electrode division is safe, but the thermal effect excessively concentrates on the semiconductor element reducing bending strength
Solution Approach 1:
The patent applies laser irradiation in a localized and controlled manner to form grooves only in specific regions where test electrodes are located, rather than uniformly treating the entire semiconductor element. This localized approach divides the thermal effect to specific areas, preventing excessive heat concentration that would reduce overall bending strength while still achieving the goal of safe test electrode division.
Solution Approach 2:
The patent uses partial laser irradiation that forms grooves extending only partially through the test electrode thickness, rather than completely severing the electrode. This partial action achieves sufficient stress relief and chipping prevention while minimizing the total thermal energy input, thereby preserving the bending strength of the semiconductor element.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach effectively suppresses bending strength reduction and prevents damage from test electrode division, ensuring reliable semiconductor element singulation without chipping.
Implementation Method 1
laser irradiation may be used for semiconductor element singulation
Implementation Method 2
the thermal effect of laser irradiation is excessively concentrated on the semiconductor element
Data Source
AI summary
A semiconductor element includes an element body and a test electrode. The element body has a principal surface facing in a thickness direction and a first side surface facing in a direction orthogonal to the principal surface and connected to the principal surface. The test electrode is disposed on the principal surface and is adjacent to the boundary between the principal surface and the first side surface. The element body is provided with a plurality of dents that straddle the boundary and are recessed from both the principal surface and the first side surface. The plurality of dents are arranged along the boundary.