Semiconductor Film Deposition with Adsorbed Inhibitor Layer Selectivity

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Solution Overview

Problem

Existing semiconductor manufacturing processes face challenges in selectively forming films on specific surfaces with high precision, particularly in distinguishing between different materials exposed on a substrate surface.

Innovation Solution

A technique involving the sequential formation of a first film containing specific elements on a first base, followed by the creation of an inhibitor layer on this film, and finally forming a second film on a second base, utilizing specific film-forming agents and modifying agents to achieve precise control over film formation.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Manufacturing precision

If conventional selective growth processes are used to form films on specific surfaces, then film formation can be achieved on desired surfaces, but manufacturing precision and selectivity are insufficient

Engineering Contradiction:
Improvefilm formation precisionVSAvoidselectivity
Core Design Contradiction:
Manufacturing precisionVSReliability

Solution Approach 1:

The patent introduces an inhibitor layer as an intermediary substance that selectively adsorbs film-forming agents. This inhibitor layer is formed on surfaces where film formation should be prevented, acting as a mediator that blocks the film-forming agent from reacting with the substrate. The inhibitor layer enables high-selectivity film formation by chemically interfering with the film formation process only on designated surfaces, thereby resolving the contradiction between manufacturing precision and selectivity.

Inventive Principle:
Principle #24Intermediary (Mediator)

2Manufacturing precision

If multiple separate processes are used for film formation and inhibition, then selective film formation can be achieved, but device complexity and process steps increase

Engineering Contradiction:
Improveselective film formationVSAvoidprocess steps
Core Design Contradiction:
Manufacturing precisionVSDevice complexity

Solution Approach 1:

The patent combines the film formation and inhibition functions into a single integrated process step. By supplying the film-forming agent and inhibitor simultaneously or in a coordinated sequence, the process achieves selective film formation without requiring completely separate process modules. This merging of functions reduces device complexity while maintaining manufacturing precision.

Inventive Principle:
Principle #5Merging (Combining)

Solution Approach 2:

The inhibitor layer is formed in advance on surfaces where film formation should be prevented, before the actual film formation process begins. This preliminary action of creating the inhibitor layer ensures that when the film-forming agent is supplied, selectivity is already established, simplifying the overall process structure and reducing the need for complex real-time control mechanisms.

Inventive Principle:
Principle #10Preliminary action

3Productivity

If conventional film formation methods are used, then films can be formed on substrate surfaces, but cross-contamination between different material surfaces occurs

Engineering Contradiction:
Improvefilm formation efficiencyVSAvoidcross-contamination
Core Design Contradiction:
ProductivityVSObject-generated harmful factors

Solution Approach 1:

The inhibitor layer serves as a protective intermediary that prevents cross-contamination between different material surfaces. By selectively adsorbing the film-forming agent on surfaces where film formation is not desired, the inhibitor layer acts as a barrier that stops unwanted film deposition and material mixing, thereby eliminating cross-contamination while maintaining high film formation efficiency on the intended surfaces.

Inventive Principle:
Principle #24Intermediary (Mediator)

4Manufacturing precision

If high selectivity is achieved through multiple process steps, then film precision improves, but manufacturing time and productivity decrease

Engineering Contradiction:
Improvefilm selectivityVSAvoidmanufacturing speed
Core Design Contradiction:
Manufacturing precisionVSProductivity

Solution Approach 1:

The patent maintains continuous useful action by performing film formation and inhibition in a coordinated, uninterrupted process. The inhibitor layer is formed and then immediately utilized in the same continuous process flow, eliminating idle time and redundant steps between process operations. This continuity ensures high selectivity is achieved without sacrificing manufacturing speed or productivity.

Inventive Principle:
Principle #20Continuity of useful action

Solution Approach 2:

The inhibitor layer formation is performed as a preliminary action that quickly prepares the surface for selective film formation. By establishing the inhibitor layer in advance in a single rapid step, the process minimizes the time required for subsequent film formation, thereby maintaining high productivity while achieving the necessary selectivity for precise film formation.

Inventive Principle:
Principle #10Preliminary action

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This method enables the selective and precise formation of films on desired surfaces, improving film characteristics and preventing cross-contamination, while also simplifying the supply system and enhancing productivity.

Implementation Method 1

causing at least a portion of molecular structures of molecules constituting the modifying agent to be adsorbed on the first film

Methodology Applied
Scientific EffectAdsorption: Adsorption

Data Source

PatentEP4539099A1Processing method, method of manufacturing semiconductor device, processing apparatus, and program
Publication Date: 2025.04.16 KOKUSAI DENKI KK
  • EP4539099A1 patent drawingFigure 1
  • EP4539099A1 patent drawingFigure 2
  • EP4539099A1 patent drawingFigure 3

AI summary

There is provided a technique that includes: (a) forming a first film containing a first element and a second element on a surface of a first base by supplying a first film-forming agent to a substrate including the first base and a second base; (b) forming an inhibitor layer on the first film by supplying a modifying agent to the substrate and causing at least a portion of molecular structures of molecules constituting the modifying agent to be adsorbed on the first film; and (c) forming a second film containing the first element and the second element on a surface of the second base by supplying a second film-forming agent to the substrate with the inhibitor layer formed on the first film.