Semiconductor Singulation via Substrate Depressions and Etching
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Solution Overview
Problem
Conventional methods for producing singulated semiconductor components often result in crystal damage and instability due to mechanical stress, especially when dealing with thin components, and require complex processes or expensive auxiliary substrates for stabilization.
Innovation Solution
A method involving forming depressions in the starting substrate before severing, using etching processes to create separating regions and a metallic layer, which allows for stable thinning and singulation without mechanical stress, eliminating the need for auxiliary substrates and enabling high-yield production of semiconductor components with low thermal resistance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If conventional mechanical severing methods (sawing or grinding) are used to singulate semiconductor components, then the separating process is simple and fast, but crystal damage occurs and component stability decreases
Solution Approach 1:
The patent replaces mechanical severing methods (sawing or grinding) with a chemical etching process to separate semiconductor components. The etching process uses chemical reactions to remove material along separating regions, eliminating mechanical stress and crystal damage while maintaining high productivity through controlled chemical reactions.
Solution Approach 2:
The patent changes the physical-chemical parameters of the substrate by forming depressions before etching. These pre-formed depressions modify the etching kinetics and allow selective removal of material in separating regions while preserving component integrity, thereby achieving both high speed and high reliability.
2Temperature
If the substrate is thinned to produce small thickness components, then power operation and heat dissipation are improved, but mechanical stability decreases and breaking risk increases
Solution Approach 1:
The patent performs preliminary actions by forming depressions in the substrate before thinning and etching operations. These pre-formed depressions serve as stress relief features and guide the subsequent etching process, allowing the substrate to be thinned to small thickness while maintaining mechanical stability through the controlled removal of material in non-critical regions.
3Reliability
If auxiliary substrates are used to stabilize the starting substrate during processing, then manufacturing stability is improved, but process complexity and production cost increase
Solution Approach 1:
The patent enables the starting substrate to stabilize itself through the formation of depressions that create inherent mechanical support structures during the etching process. The substrate's own structure, modified by the depressions, provides the necessary stability during processing, eliminating the need for external auxiliary substrates and reducing process complexity.
4Manufacturing precision
If photolithographic patterning of metal layers is performed before etching, then precise alignment is achieved, but process complexity and alignment requirements increase
Solution Approach 1:
The patent inverts the conventional sequence by forming depressions in the substrate first, then using these depressions as self-aligned references for subsequent metal layer deposition and etching processes. This approach achieves precise alignment automatically through the physical structure created by the depressions, eliminating the need for complex photolithographic patterning and alignment procedures.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The method achieves mechanically stable semiconductor components with small thickness, enabling higher power operation with improved heat dissipation and cost-effective production without auxiliary substrates, while avoiding crystal damage and complex alignment issues.
Implementation Method 1
carrying out an etching process for forming depressions at a side of the starting substrate
Implementation Method 2
forming a metallic layer on the side of the starting substrate with the depressions and walls
Data Source
AI summary
A method for producing singulated semiconductor components includes providing a starting substrate. An etching process is carried out to form depressions at a side of the starting substrate. The depressions are arranged in the region of the semiconductor components to be produced. Walls present between the depressions are arranged in the region of separating regions provided for severing the starting substrate. The method furthermore comprises forming a metallic layer on the side of the starting substrate with the depressions and walls and carrying out a further etching process for severing the starting substrate in the separating regions and forming the singulated semiconductor components.