Non-destructive Semiconductor Depth Profiling via E-beam X-ray Analysis
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Current semiconductor industry techniques for material depth-profiling, such as ToF-SIMS and TEM-EDX spectroscopy, are destructive and fail to provide non-destructive z-profiling of materials like fluorine and nitrogen, which are crucial for ensuring device performance and reliability.
Innovation Solution
A computer-based method using electron beams to induce X-ray emissions in semiconductor samples, allowing for non-destructive depth-profiling by projecting electron beams at varying energies to probe different depths, measuring emitted light, and analyzing the data with machine-learning algorithms to determine concentration maps of target materials like fluorine, nitrogen, boron, and gallium.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If destructive techniques like ToF-SIMS or TEM-EDX are used for material depth-profiling, then measurement precision of material concentration is improved, but the sample is damaged and cannot be reused
Solution Approach 1:
The patent uses X-ray emissions as an intermediary signal to obtain material concentration information without direct physical contact or destruction of the sample. The e-beam serves as a mediator that excites X-ray emissions from the sample, allowing indirect measurement of material composition at different depths while preserving sample integrity.
Solution Approach 2:
The patent replaces destructive mechanical or chemical analysis methods (ToF-SIMS, TEM-EDX) with a non-destructive electromagnetic radiation-based method. Instead of physically sputtering or sectioning the sample, the invention uses e-beam induced X-ray emissions to probe material composition, substituting mechanical destruction with electromagnetic interaction.
2Measurement precision
If multiple measurement techniques are used to achieve comprehensive material characterization, then measurement precision is improved, but device complexity increases
Solution Approach 1:
The patent creates a universal measurement system that can characterize multiple materials (nitrogen, fluorine, boron, gallium, and other group III-V elements) using a single e-beam induced X-ray emission technique. This multi-functional approach replaces the need for multiple specialized instruments (ToF-SIMS, TEM-EDX, etc.) with one versatile platform that handles diverse material analysis through unified physical principles.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Enables non-destructive, high-resolution depth-profiling of semiconductor materials, providing accurate concentration maps of target materials without damaging the samples, thereby improving device performance and reliability.
Implementation Method 1
Projecting an electron beam (e-beam) on the inspected sample. The e-beam penetrates the sample and induces light-emitting interactions (e.g. X-ray light-emitting interactions) within a respective probed region of the inspected sample
Data Source
AI summary
Disclosed herein is a system for non-destructive depth-profiling of samples. The system includes an electron beam source, a light sensor, and processing circuitry. The electron beam source configured to project e-beams on an inspected sample at each of a plurality of landing energies, which induce X-ray emitting interactions within each of a plurality of probed regions in the inspected sample, respectively, whose depth is determined by the landing energy. The light sensor is configured to measure the emitted X-ray light to obtain optical emission data sets pertaining to each of the probed regions, respectively. The processing circuitry is configured to determine a set of structural parameters, characterizing an internal geometry and/or a composition of the inspected sample, based on the measured optical emission data sets and taking into account reference data indicative of an intended design of the inspected sample.