Semiconductor Abnormality Detection Circuit Using Sense Signal Voltage

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Solution Overview

Problem

Existing semiconductor switch device failure detection methods are costly and inefficient, particularly when dealing with large numbers of loads, as they require complex circuits and direct current measurement, which increases wiring complexity and costs, and fail to accurately detect failures when the power source is not supplied.

Innovation Solution

A semiconductor abnormality detection circuit that includes a switch device and a sense signal generator, with a controller that binarily switches the instruction voltage to determine the normal operation of the switch device by comparing the sense signal voltage with prescribed off and on voltages, reducing the need for additional components and allowing for reliable failure detection without direct current measurement.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Device complexity

If voltage monitoring method is used, then component count is reduced, but detection reliability in zero-power state is insufficient

Engineering Contradiction:
Improvecomponent countVSAvoiddetection reliability in zero-power state
Core Design Contradiction:
Device complexityVSReliability

Solution Approach 1:

The detection circuit performs preliminary detection actions by storing detection results in memory before the power source is fully supplied. The microcontroller executes detection routines in advance, capturing the state of the semiconductor switch device during the power-up transition period, and stores these results for later analysis, enabling reliable failure detection even when the system operates in zero-power states.

Inventive Principle:
Principle #10Preliminary action

2Measurement precision

If direct current measurement is used, then detection accuracy is improved, but wiring complexity increases

Engineering Contradiction:
Improvedetection accuracyVSAvoidwiring complexity
Core Design Contradiction:
Measurement precisionVSDevice complexity

Solution Approach 1:

The patent introduces an intermediary detection circuit that indirectly measures current parameters without requiring direct current measurement paths. The circuit uses voltage measurements across known impedances and computational algorithms to derive current information, thereby achieving accurate detection while avoiding the wiring complexity of direct current measurement techniques.

Inventive Principle:
Principle #24Intermediary (Mediator)

3Reliability

If conventional detection circuits are added for each switch, then detection capability is improved, but cost increases substantially

Engineering Contradiction:
Improvedetection capabilityVSAvoidcost
Core Design Contradiction:
ReliabilityVSEase of manufacture

Solution Approach 1:

The patent implements a universal detection circuit architecture that can monitor multiple semiconductor switch devices using a single microcontroller and shared peripheral components. The system employs software-based detection routines that can be configured to monitor different switches sequentially or simultaneously, eliminating the need for dedicated detection circuits for each switch device and substantially reducing overall system cost while maintaining comprehensive detection capability.

Inventive Principle:
Principle #6Universality (Multi-functionality)

Data Source

PatentUS10048305B2Semiconductor abnormality detection circuit
Publication Date: 2018.08.14 YAZAKI CORP
  • US10048305B2 patent drawing
  • US10048305B2 patent drawing
  • US10048305B2 patent drawing

AI summary

A semiconductor abnormality detection circuit includes a semiconductor circuit and a controller which controls supply of power to a load. The semiconductor circuit includes a switch device disposed between a power source and the load, and a sense signal generator generating a sense signal corresponding to a current flowing through the switch device. The controller judges that the semiconductor circuit is operating normally if the instruction voltage level is equal to an off-voltage corresponding to non-energization of the switch device and a voltage of the sense signal is equivalent to a prescribed off-voltage corresponding to non-energization of the switch device or the instruction voltage level is equal to an on-voltage corresponding to energization of the switch device and a voltage of the sense signal is equivalent to a prescribed on-voltage corresponding to a steady energization state of the load.