Semiconductor Detection Transistor with Gate Resistance
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Solution Overview
Problem
Conventional semiconductor devices with power supply short-circuit detecting functions are prone to circuit malfunctions due to parasitic PNP transistors operating based on their layout configuration, which affects reliability.
Innovation Solution
A semiconductor device design incorporating a detection transistor portion with a resistance portion connected to its gate terminal, a diode, and a polysilicon film with lower dopant concentration, which suppresses parasitic PNP transistor operation by forming a second conductivity type channel and using a diffusion resistance layer surrounded by a second well layer to prevent short-circuit detection malfunctions.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a conventional layout configuration is used in semiconductor devices with power supply short-circuit detecting functions, then the device structure is simple and easy to manufacture, but parasitic PNP transistors may operate and induce circuit malfunction, reducing reliability
Solution Approach 1:
A resistance portion is introduced as an intermediary element between the detection transistor gate and the power supply terminal. This resistance portion suppresses parasitic PNP transistor operation by limiting current flow and preventing the voltage conditions that would activate parasitic transistors, thereby improving reliability without requiring fundamental layout redesign
Solution Approach 2:
The resistance portion changes the electrical parameters (resistance value, voltage distribution) in the detection circuit. By introducing a specific resistance value, the circuit operates reliably during power supply short-circuits while preventing parasitic transistor activation, resolving the contradiction between simplicity and reliability
2Area of stationary object
If the resistance portion is placed close to the well layer of the transistor, then the device area is reduced, but parasitic PNP transistor operation may be induced due to layout configuration
Solution Approach 1:
The resistance portion is positioned specifically close to the well layer region, creating a localized electrical characteristic that suppresses parasitic PNP transistor operation. This local placement optimizes space utilization while maintaining reliability by targeting the specific area where parasitic effects occur
Solution Approach 2:
The resistance portion acts as a protective intermediary between the detection transistor and the power supply, particularly near the well layer. It prevents harmful electrical interactions in this critical region while allowing compact overall device layout
Data Source
AI summary
Improving reliability of a semiconductor device including a transistor and resistance portion. Providing a semiconductor device including: a transistor including a gate portion and second conductivity type well layer, provided on a substrate having a first conductivity type drift region; a resistance portion provided close to a well layer of the transistor in the substrate; and two terminals connected to the resistance portion. The resistance portion is not of a second conductivity type region formed on the substrate. The semiconductor device further includes: an output transistor portion to switch whether or not the semiconductor device outputs current; a control transistor portion provided to a control protection circuit for controlling the output transistor portion; and a detection transistor portion to detect whether or not a power supply short-circuit is occurring to the semiconductor device. The transistor may be any of the output transistor portion, control transistor portion, or control transistor portion.