Semiconductor Detector Layout for e-Beam Uniformity Feedback
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
The semiconductor industry faces challenges in maintaining reliability and yield in patterning processes as feature sizes decrease, with current optical proximity correction and lithography parameter adjustments being insufficient.
Innovation Solution
The development of high-density, powerless semiconductor detectors for detecting e-beam lights, which include a substrate, active regions, isolation structures, gate structures, source/drain structures, sensing contacts, sensing pad structures, and reading contacts, allowing for efficient detection and adjustment of e-beam light uniformity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If optical proximity correction and lithography parameter adjustments are used, then patterning quality can be partially improved, but the solutions are insufficient for maintaining reliability as feature sizes decrease
Solution Approach 1:
The patent implements a feedback mechanism where detectors monitor the e-beam light intensity and uniformity in real-time during the patterning process. This feedback information is used to dynamically adjust lithography parameters, creating a closed-loop control system that maintains patterning reliability despite decreasing feature sizes.
Solution Approach 2:
The patent replaces traditional optical proximity correction methods with an electron beam-based detection and adjustment system. This substitution enables more precise measurement and control of light uniformity, providing better reliability for advanced patterning processes.
2Productivity
If feature sizes are decreased to increase device density, then productivity and integration are improved, but maintaining reliability and yield becomes more difficult
Solution Approach 1:
The detector system provides real-time feedback on e-beam light uniformity, enabling dynamic adjustment of patterning parameters to maintain reliability even as feature sizes decrease and device density increases.
Solution Approach 2:
The system dynamically changes lithography parameters based on detected e-beam light conditions, allowing the patterning process to adapt to varying conditions and maintain reliability across different feature sizes and device densities.
3Manufacturing precision
If current patterning correction methods are used, then some defects can be mitigated, but the solutions are not entirely satisfactory and lack real-time detection capability
Solution Approach 1:
The patent implements real-time feedback detection using e-beam-based detectors that monitor light intensity and uniformity during the patterning process, enabling immediate identification and correction of defects rather than post-processing inspection.
Solution Approach 2:
The patent introduces an intermediary e-beam detection system that acts as a mediator between the light source and the patterning process, providing real-time information about light uniformity that can be used to adjust the process parameters.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The semiconductor detectors enable precise detection of e-beam light intensity and uniformity, allowing for real-time adjustments to improve patterning quality and reliability, while being compatible with existing semiconductor manufacturing processes.
Implementation Method 1
The semiconductor detectors enable precise detection of e-beam light intensity and uniformity
Data Source
AI summary
A device includes an active region, an isolation structure, a gate structure, an interlayer dielectric (ILD) layer, a reading contact, and a sensing contact. The isolation structure laterally surrounds the active region. The gate structure is across the active region. The ILD layer laterally surrounds the gate structure. The reading contact is in contact with the isolation structure and is separated from the gate structure by a first portion of the ILD layer. The sensing contact is in contact with the isolation structure and is separated from the gate structure by a second portion of the ILD layer.