Semiconductor Deuterium Passivation via Resonant Light
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Solution Overview
Problem
Current methods for deuterium passivation of semiconductor devices are hindered by the need for high-temperature heat treatment, which introduces thermal defects and is non-selective, or the impracticality of electrical prestress, especially for large-scale implementation, as they struggle to selectively cleave silicon-hydrogen chemical bonds without damaging other chemical bonds.
Innovation Solution
Exposing semiconductor devices to light of a specific wavelength that resonates with silicon-hydrogen chemical bonds, allowing for selective cleavage of these bonds without generating heat, thereby enabling deuterium to replace hydrogen and passivate the device.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If high-temperature heat treatment is used to cleave silicon-hydrogen bonds, then bond cleavage is achieved, but thermal defects are created and other chemical bonds are damaged
Solution Approach 1:
The patent replaces thermal energy (heat treatment) with light energy (photons) to cleave silicon-hydrogen bonds. This substitution allows selective bond cleavage at room temperature by tuning the light wavelength to match the resonant frequency of Si-H bonds, avoiding the non-selective thermal damage caused by high-temperature treatment.
Solution Approach 2:
The patent changes the energy delivery parameter from thermal energy (heat) to optical energy (light) with specific wavelength. By selecting light wavelength that resonates with Si-H bond vibrational frequency, the process achieves selective bond cleavage without raising temperature, thus preventing thermal defects and non-selective bond damage.
2Reliability
If high-temperature heat treatment is used for deuterium passivation, then hydrogen is replaced by deuterium, but the entire device is heated causing non-selective bond cleavage
Solution Approach 1:
The patent substitutes thermal processing with optical processing for deuterium passivation. By using light at wavelengths resonant with Si-H bonds, hydrogen is selectively removed and replaced by deuterium without heating the entire device, thus avoiding non-selective bond cleavage and maintaining passivation quality.
Solution Approach 2:
The patent applies energy locally and selectively to Si-H bonds through resonant light absorption, rather than heating the entire device uniformly. This localized action ensures that only the desired bonds are affected, preserving other chemical bonds and achieving high-quality passivation.
3Manufacturing precision
If electrical prestress is used to cleave bonds, then selective bond cleavage is achieved, but the method is impractical for large-scale implementation
Solution Approach 1:
The patent replaces electrical field-based bond cleavage with optical field-based cleavage. Light can be applied uniformly across large areas and to multiple devices simultaneously, maintaining selective bond cleavage while enabling large-scale manufacturing and high productivity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method achieves selective and efficient cleavage of silicon-hydrogen bonds at low temperatures, reducing thermal defects and enabling large-scale deuterium passivation, resulting in improved semiconductor device performance and longevity by minimizing thermal energy impact.
Implementation Method 1
Exposing semiconductor devices to light of a specific wavelength that resonates with silicon-hydrogen chemical bonds, allowing for selective cleavage of these bonds
Implementation Method 2
subjecting the semiconductor device to light of a wavelength sufficient to cleave at least some of the chemical bonds between the semiconductor device and the undesired chemical species
Data Source
AI summary
A method of treating a semiconductor device wherein there is provided a semiconductor device, the semiconductor device being at least in part chemically bonded to an undesired chemical species. The semiconductor device is subjected to light of a wavelength sufficient to cleave at least some of the chemical bonds between the semiconductor device and the undesired chemical species, and the semiconductor device is exposed to a source of a desired chemical species, such that the semiconductor device becomes at least in part chemically bonded to the desired chemical species.