Semiconductor Device Automatic Standby to Deep Power Down Transition
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Conventional semiconductor devices require an external command to transition from standby mode to deep power down (DPD) mode, limiting power consumption reduction in standby mode due to ongoing current consumption and internal power supply voltage detection.
Innovation Solution
A semiconductor device with a measurement part to track time in standby mode, a detection part to determine when a predetermined time has elapsed, and a generation part to automatically generate a power down enable signal, allowing transition to DPD mode without an external command.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If the flash memory enters standby mode with internal power supply voltage detection circuit operating, then the device can respond immediately to user commands, but power consumption cannot be reduced below a certain level due to off leak current and detection circuit operation
Solution Approach 1:
The flash memory automatically determines whether to enter DPD mode based on its own internal state (standby duration) without requiring external commands. The control circuit monitors the standby time and autonomously transitions to DPD mode, making the system self-managing and eliminating the need for continuous external control signals.
Solution Approach 2:
The flash memory enters DPD mode after a predetermined standby period has elapsed, preparing for deeper power savings in advance. This preliminary transition to DPD mode occurs before the user would need to issue a DPD command, thus reducing power consumption proactively while maintaining the ability to respond to commands if needed.
2Use of energy by moving object
If a DPD command is required to enter deep power down mode, then the device can achieve drastic power consumption reduction, but the device complexity increases and devices without DPD command support cannot benefit
Solution Approach 1:
The control circuit is designed to perform multiple functions: it can operate in standard mode responding to external DPD commands, and simultaneously function as an automatic standby-time monitor that triggers DPD mode entry without external commands. This multi-functionality makes the feature universally applicable across different device configurations and user scenarios.
Solution Approach 2:
The flash memory automatically determines whether to enter DPD mode based on its own internal state (standby duration) without requiring external commands. The control circuit monitors the standby time and autonomously transitions to DPD mode, making the system self-managing and eliminating the need for continuous external control signals.
3Ease of operation
If the flash memory remains in standby mode accepting commands, then user convenience is maintained, but off leak current continues to increase as element size shrinks
Solution Approach 1:
The flash memory dynamically adjusts its operational state based on the duration of standby. It transitions from a state where commands are accepted (standby mode) to a state where power is further reduced (DPD mode) after a predetermined time. This dynamic state adjustment allows the system to optimize between command responsiveness and power consumption based on real-time conditions.
Solution Approach 2:
The flash memory operates in periodic cycles between standby mode and DPD mode. After entering standby, it automatically transitions to DPD mode after a predetermined period, and can return to standby mode when commands are received. This periodic switching between operational states enables the system to minimize power consumption while maintaining usability when needed.
Data Source
AI summary
A semiconductor device capable of automatically transitioning from a standby mode to a deep power down (DPD) mode is provided. The semiconductor device includes: internal circuits capable of operating in response to an input signal from an input/output circuit; and a controller capable of controlling operations of the internal circuits. The internal circuit supporting the DPD mode includes: a measurement part, measuring a time since a time point of the semiconductor device entering the standby mode; a transition time detection part, detecting a case where a measurement time of the measurement part has reached a certain time; and a DPD signal generation part, generating a power down enable signal for further reducing power consumption in the standby mode when a transition time is detected.