Semiconductor Device Reducing Current Collapse via Insulating Layer Thickness
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Solution Overview
Problem
Current semiconductor devices experience current collapse due to increased on-resistance caused by electrons being depleted at the surface defect level of the second semiconductor layer, leading to a rise in on-resistance when a large potential is applied to the second electrode.
Innovation Solution
The semiconductor device design includes a specific structure with a first semiconductor layer, a second semiconductor layer, and insulating portions positioned to minimize overlap between the second insulating portion and the third partial region, reducing the thickness of the second insulating portion to zero between the second semiconductor layer and the third electrode, thereby reducing current collapse and maintaining breakdown voltage.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If the second insulating portion is made thick to protect the third partial region, then reliability is improved, but on-resistance increases due to electron depletion at the surface defect level
Solution Approach 1:
The patent applies local quality by making the insulating portion thickness non-uniform: the first insulating portion has a first thickness in a first region, while the second insulating portion has a second thickness in a second region. This localized variation in thickness allows optimization of protection in different areas, providing sufficient insulation where needed while minimizing electron depletion effects in critical regions, thus resolving the contradiction between reliability and on-resistance.
2Power
If a large potential is applied to the second electrode to increase power output, then power is improved, but current collapse occurs due to electron depletion
Solution Approach 1:
The patent implements beforehand cushioning by providing insulating portions with optimized thickness distribution before operation. The first insulating portion with first thickness and the second insulating portion with second thickness are pre-configured to prevent electron depletion at the surface defect level before it can cause current collapse. This preventive structure allows large potentials to be applied for high power output without experiencing current collapse, as the insulating portions cushion against the harmful effects in advance.
3Object-affected harmful factors
If the insulating portion thickness is reduced to minimize electron depletion, then on-resistance is improved, but protection capability is reduced
Solution Approach 1:
The patent resolves this contradiction through local quality by implementing spatially varying insulating portion thickness. The first insulating portion maintains a first thickness providing protection in regions where protection is critical, while the second insulating portion has a second thickness optimized for regions where minimizing electron depletion is priority. This localized optimization allows the structure to simultaneously achieve adequate protection capability and minimized on-resistance by matching thickness to local requirements.
Data Source
AI summary
According to one embodiment, a semiconductor device includes first and second semiconductor layers, first, second, and third electrodes, and first and second insulating portions. The first semiconductor layer includes first, second, and third semiconductor regions. The second semiconductor layer includes first to sixth partial regions. The first electrode is electrically connected to the first partial region. The second electrode is electrically connected to the second partial region. A position of the third electrode is between positions of the first and second electrodes in a second direction. A first direction crosses the second direction from the first to second semiconductor regions. The first insulating portion is provided between the third semiconductor region and the third electrode and between the third partial region and the third electrode in the first direction. The fourth partial region is between the second insulating portion and the second semiconductor region in the first direction.