3D Semiconductor Device Integration Density
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Solution Overview
Problem
Existing DRAM devices face challenges in efficiently arranging word lines, bit lines, channels, and capacitors to increase integration density.
Innovation Solution
A semiconductor device design that includes first and second bit lines, a word line with extension portions, and channels and capacitors arranged to optimize spatial arrangement and electrical connectivity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If conventional DRAM device arrangement methods are used, then device structure is simple, but integration density is low
Solution Approach 1:
The patent implements a three-dimensional arrangement where bit lines extend vertically (first direction perpendicular to substrate) rather than only horizontally, creating multiple stacking levels. Word lines with extension portions and channels are arranged across different vertical levels, transforming a two-dimensional planar layout into a three-dimensional stacked architecture that increases integration density without proportionally increasing planar footprint.
Solution Approach 2:
The patent embeds channels within the extension portions of word lines, creating a nested configuration where one structure (channel) is positioned inside or through another structure (word line extension). This nesting approach allows multiple functional elements to occupy overlapping or interpenetrating spatial regions, maximizing space utilization and increasing the number of devices per unit area.
2Reliability
If bit lines are spaced apart in traditional directions, then manufacturing is easier, but electrical performance is limited
Solution Approach 1:
The patent changes the spatial parameters of bit line arrangement by extending them vertically in the first direction and spacing them in both the second direction (parallel to substrate) and third direction (intersecting the second direction). This multi-directional spacing parameter change optimizes electrical performance by reducing interference while maintaining manufacturability through systematic geometric progression.
Solution Approach 2:
The patent employs asymmetric spacing arrangements where bit lines are positioned at different intervals in different directions, and word line extension portions are positioned asymmetrically relative to bit lines. This asymmetric configuration optimizes electrical characteristics such as signal integrity and capacitance coupling while maintaining a structured manufacturing approach.
Data Source
AI summary
A semiconductor device includes first and second bit lines, a word line, first and second channels and a capacitor. The first and second bit lines extend primarily in a first direction and are spaced apart from each other in a second direction on a substrate. The word line includes first extension portions extending primarily in a third direction, between the first and second bit lines, and a second extension portion extending primarily in the second direction at the same level as the first extension portions and is connected thereto. Each of the first and second channels extends through the first extension portions. The capacitor includes a first capacitor electrode electrically connected to the first channel, a dielectric pattern disposed on a surface of the first capacitor electrode, and a second capacitor electrode disposed on a surface of the dielectric pattern and electrically connected to the second channel.