Semiconductor Device Joining Metal Layer Dicing Defects
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Solution Overview
Problem
The formation of curls and defects during the cutting process of semiconductor chips with a joining metal layer on the support substrate leads to a decline in production yield, as the substrate absorbs light and affects the luminous intensity of light emitting devices.
Innovation Solution
A semiconductor device and manufacturing method where a semiconductor layer, specifically the p-type contact layer, is left in contact with the joining metal layer to form a protective layer during the dicing process, preventing curls and defects by maintaining a uniform thickness and ensuring proper light reflection.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Illumination intensity
If a joining metal layer is provided on the support substrate to reflect light and eliminate substrate absorption, then luminous intensity is improved, but curls and defects are formed during cutting process
Solution Approach 1:
A protective layer is formed on the support substrate before the joining metal layer is deposited. This preliminary protective layer remains in place during the cutting process to prevent curls and defects, and is removed after the joining metal layer is formed, allowing the light reflection function to work effectively.
Solution Approach 2:
The protective layer acts as an intermediary between the support substrate and the joining metal layer during the cutting process. It mediates the mechanical stress during dicing to prevent curls, while being removable afterward to allow the joining metal layer to perform its light reflection function without interference.
2Stability of the object's composition
If the support substrate is used for mechanical support during epitaxial growth, then structural stability is improved, but light absorption occurs reducing luminous intensity
Solution Approach 1:
The support substrate is separated from the light-emitting stacked body through a removable protective layer. The protective layer allows the substrate to provide structural stability during growth and handling, but can be removed to eliminate light absorption, effectively segmenting the structural support function from the light transmission function.
Solution Approach 2:
The protective layer is extracted or removed after serving its protective function during cutting. This removal extracts the light-absorbing element from the system, allowing light to pass through to the joining metal layer for reflection, while the substrate's structural support function was already fulfilled during the critical phases.
3Illumination intensity
If the stacked body is transferred to another substrate via joining metal layer, then substrate light absorption is eliminated, but cutting process creates curls and defects
Solution Approach 1:
The protective layer is formed preliminarily on the support substrate before the joining metal layer is deposited and before the cutting process occurs. This preliminary protective layer prevents curls and defects during dicing, ensuring high production yield, and is subsequently removed to allow the joining metal layer to eliminate substrate light absorption.
Solution Approach 2:
The protective layer provides beforehand cushioning or protection during the cutting process. It cushions against mechanical stresses that would otherwise cause curls and defects in the joining metal layer, ensuring reliable chip quality. After cutting, the protective layer is removed to achieve the light reflection benefit.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enhances the quality and reproducibility of chip shapes, reduces defects, and improves luminous intensity by maintaining the semiconductor layer's integrity and light reflection capabilities.
Implementation Method 1
a stacked body adhered to a support substrate formed from silicon or the like via a joining metal layer that reflects light emitted from the light emitting layer
Data Source
AI summary
According to one embodiment, a semiconductor device includes a substrate and a stacked body on the substrate via a joining metal layer. The stacked body includes a device portion and a peripheral portion. The device portion includes from a bottommost layer to a topmost layer included in the stacked body. The peripheral portion surrounding and provided around the device portion; the peripheral portion is a portion of the bottommost layer to the topmost layer included in the stacked body and includes a portion of a semiconductor layer in contact with the joining metal layer.