Semiconductor Device Layout for Integration Density
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Solution Overview
Problem
As semiconductor devices require smaller and more integrated layouts to improve performance, existing methods struggle to efficiently minimize area for cross gate connection circuits, particularly in the arrangement of gate contacts and source/drain contacts, which affects space efficiency and integration density.
Innovation Solution
The semiconductor device incorporates a specific layout with first, second, third, and fourth bottom contacts, active fins, and gate electrodes arranged in a manner that allows for overlapping and spacing to optimize space usage, including the use of dummy gate electrodes to secure space margins and facilitate wiring, thereby enhancing integration density and performance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Area of stationary object
If conventional layout methods are used for cross gate connection circuits, then the circuit functionality is achieved, but the area occupation is excessive and integration density is reduced
Solution Approach 1:
The patent merges multiple gate electrodes and active fins into a shared layout structure where the second and third gate electrodes are disposed on side surfaces of overlapping active fins. This merging approach allows multiple transistor functions to coexist in a reduced footprint, directly addressing the contradiction by decreasing layout area while maintaining integration density.
Solution Approach 2:
The patent utilizes three-dimensional FinFET structures where active fins extend vertically from the substrate, and gate electrodes wrap around side surfaces of these fins. This dimensional transition from planar to vertical architecture enables higher integration density within a smaller footprint by exploiting the third dimension (height) to increase functional capacity without proportionally increasing footprint area.
2Ease of operation
If gate contacts and source/drain contacts are arranged in traditional configurations, then electrical connectivity is established, but space efficiency is compromised
Solution Approach 1:
The patent implements a unified contact structure where top contacts serve multiple functions: they provide electrical connectivity to drain nodes of adjacent transistors while simultaneously acting as interconnect elements for the gate connection circuit. This multi-functional contact design eliminates the need for separate dedicated contact structures, thereby improving space efficiency while maintaining complete electrical connectivity.
Solution Approach 2:
The gate electrodes and active fins are arranged such that the overlapping fins and shared gates automatically provide the necessary electrical pathways and connectivity functions. The structure serves itself by using the same physical elements (overlapping fins, shared gates) to fulfill multiple electrical connection requirements, reducing the need for additional dedicated connection structures.
Data Source
AI summary
A semiconductor device includes a substrate, first, second, third and fourth bottom contacts in the substrate, and first, second, third and fourth active fins on respective ones of the first, second, third and fourth bottom contacts, the second and third fins overlapping in a first direction. First, second and third gate electrodes extend longitudinally in the first direction, the first and second gate electrodes disposed on side surfaces of respective ones of the first and fourth active fins and the third gate electrode disposed on side surfaces of the second and third active fins. A first top contact is on the first and second active fins and a second top contact is on the third and fourth active fins.