Insulated Gate Semiconductor Device Parallel Path Mutual Induction
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Solution Overview
Problem
Existing insulating gate semiconductor devices face challenges in reducing switching loss and increasing turn-on operation speed, as previous methods have not been sufficient in achieving these goals.
Innovation Solution
The solution involves an insulating gate semiconductor device with a main-current path member and a gate-current path member, both patterned in linearly extending portions on an insulating circuit board, where the gate-current path member is arranged in parallel to the main-current path member to utilize mutual induction for enhancing the gate-current during the turn-on period, thereby reducing switching loss and increasing speed.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Speed
If conventional gate drive circuits are used, then device simplicity is maintained, but turn-on operation speed is insufficient and switching loss is high
Solution Approach 1:
The patent converts the harmful parasitic inductance in the gate-current path member into a beneficial element by arranging it in parallel with the main-current path member. During turn-on, the change in main-current generates a magnetic field that induces an additional gate-current through mutual induction, accelerating the turn-on operation and reducing switching loss. This transforms what was traditionally considered a harmful parasitic effect into a useful mechanism for improving switching performance.
Solution Approach 2:
The patent merges the main-current path member and gate-current path member into a closely coupled parallel configuration on the insulating circuit board. This merging allows the magnetic field generated by the main-current to directly induce additional gate-current, creating a combined effect that accelerates turn-on operation while reducing switching loss.
2Speed
If gate-current is increased to speed up turn-on, then turn-on operation speed improves, but device complexity increases
Solution Approach 1:
The patent implements a self-service mechanism where the main-current itself generates the additional gate-current needed for fast turn-on through mutual induction. The change in main-current automatically induces an additional gate-current in the parallel path member, eliminating the need for external control circuits or additional components to generate fast turn-on current.
Solution Approach 2:
The patent introduces the magnetic field as an intermediary between the main-current and gate-current. The change in main-current generates a magnetic field that mediates the induction of additional gate-current in the parallel path member, enabling automatic acceleration of turn-on operation without direct electrical connection or complex control logic.
3Speed
If parallel path members are arranged closely for mutual induction, then turn-on speed improves, but manufacturing precision requirements increase
Solution Approach 1:
The patent designs the parallel path members with standardized linear extending portions that serve multiple functions: they carry main-current and gate-current respectively, generate magnetic fields for mutual induction, and provide a standardized mounting structure that simplifies manufacturing. This universal design approach reduces the need for high-precision custom alignment while maintaining effective mutual induction.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration effectively accelerates the turn-on operation and reduces switching loss by leveraging parasitic inductance, allowing for faster main-current peak values and quicker collector-emitter voltage drops, while maintaining compatibility with existing standardized packages and reducing manufacturing costs.
Implementation Method 1
A current which is induced in the gate-current path member by mutual induction caused by a change in magnetic field implemented by the main-current is used for increasing the gate-current in a turn-on period of the insulating gate semiconductor element.
Data Source
AI summary
An insulating gate semiconductor device includes an insulating gate semiconductor element, an insulating circuit board, and a main-current path member. A main-current of the insulating gate semiconductor element flows toward a first external terminal in the main-current path member; and a gate-current path member, being patterned so as to have a linearly extending portion arranged in parallel to a linearly extending portion of the main-current path member in a planar pattern on the insulating circuit board, being provided to connect between a second external terminal and a gate electrode of the insulating gate semiconductor element. A current which is induced in the gate-current path member by mutual induction caused by a change in magnetic field implemented by the main-current is used for increasing the gate-current in a turn-on period of the insulating gate semiconductor element.