Chip-Size Semiconductor Device with Parallel Resistors for Heat Dissipation

Resolve Bottlenecks,
Find Innovative SolutionsGenerate Solutions

Solution Overview

Problem

Conventional semiconductor devices with a single resistor element for discharge current control experience localized heat generation, leading to elevated temperatures that can exceed the device's operating limits and result in inefficient heat dissipation, potentially causing breakdown.

Innovation Solution

A chip-size-package-type semiconductor device with multiple resistor elements arranged in parallel, connected to a transistor element and external resistance terminals, dispersing heat generation and enhancing heat dissipation through facedown mounting and strategic terminal placement.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Device complexity

If a single resistor element is used for discharge current control, then the device structure is simple, but heat is generated only in a local region causing temperature to exceed allowable operating temperature

Engineering Contradiction:

Improveresistor element configurationVSAvoidlocal region temperature

Core Design Contradiction:

Device complexityVSTemperature

Solution Approach 1:

The single resistor element is divided into multiple resistor elements (first resistor elements and second resistor elements) that are spatially separated and distributed across different regions of the semiconductor device. This segmentation disperses the heat generation locations, preventing excessive temperature concentration in any single local region while maintaining the discharge current control function.

Inventive Principle:

Principle #1Segmentation

2Device complexity

If a single resistor element is used for discharge current control, then the device structure is simple, but heat dissipation efficiency is poor

Engineering Contradiction:

Improveresistor element configurationVSAvoidheat dissipation efficiency

Core Design Contradiction:

Device complexityVSLoss of energy

Solution Approach 1:

Multiple resistor elements are distributed across different regions of the semiconductor device, including both internal regions and regions near external terminals. This spatial distribution increases the surface area for heat dissipation and creates multiple heat dissipation pathways, significantly improving heat dissipation efficiency compared to a single concentrated resistor element.

Inventive Principle:

Principle #1Segmentation

Solution Approach 2:

The resistor elements are arranged in multiple spatial dimensions and locations within the semiconductor device structure, including internal layers and external terminal regions. This multi-dimensional arrangement expands the heat dissipation volume and surface area, enhancing thermal management capabilities.

Inventive Principle:

Principle #17Another dimension (Dimensionality change)

3Loss of energy

If multiple resistor elements are used for discharge current control, then heat dissipation efficiency is improved, but device complexity increases

Engineering Contradiction:

Improveheat dissipation efficiencyVSAvoidresistor element configuration

Core Design Contradiction:

Loss of energyVSDevice complexity

Solution Approach 1:

Multiple resistor elements are integrated into a unified semiconductor device structure with shared substrates, interconnects, and control mechanisms. The first and second resistor elements are combined with the transistor element and external terminals to form a cohesive discharge control system, managing complexity through systematic integration rather than separate components.

Inventive Principle:

Principle #5Merging (Combining)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This configuration reduces the maximum temperature of resistor elements during discharge control, preventing breakdown and improving heat dissipation efficiency compared to conventional techniques.

Implementation Method 1

heat is generated only in the local region in the semiconductor device where the resistor element is disposed

Methodology Applied

Scientific EffectJoule heating: Joule Heating

Implementation Method 2

it is not easy to transfer the heat generated in the local region to the surrounding region

Methodology Applied

Scientific EffectThermal conduction: Conduction (thermal)

Data Source

PatentUS11626399B2Semiconductor device

Publication Date: 2023.04.11 NUVOTON TECH CORP JAPAN

AI summary

Provided is a semiconductor device which is a facedown mounting, chip-size-package-type semiconductor device and includes: a transistor element including a first electrode, a second electrode, and a control electrode which controls a conduction state between the first electrode and the second electrode; a plurality of first resistor elements each including a first electrode and a second electrode, the first electrodes of the first resistor elements being electrically connected to the second electrode of the transistor element; one or more external resistance terminals to which the second electrodes of the plurality of first resistor elements are physically connected; a first external terminal electrically connected to the first electrode of the transistor element; and an external control terminal electrically connected to the control electrode. The one or more external resistance terminals, the first external terminal, and the external control terminal are external connection terminals provided on a surface of the semiconductor device.