Semiconductor Device Parasitic Capacitance Reduction
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Solution Overview
Problem
Semiconductor devices experience significant loss due to parasitic capacitance, particularly drain pad-source capacitance, which increases with the surface area of the drain pad, leading to inefficiencies in operation.
Innovation Solution
Incorporating a second region with lower conductivity, such as an insulating material, at the position corresponding to the conductive portion functioning as the drain pad, reduces the parasitic capacitance and electrical capacitance between the conductive portion and the first member, thereby minimizing loss.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Area of stationary object
If the surface area of the drain pad is increased, then the electrical connection area is improved, but the parasitic capacitance increases leading to higher loss
Solution Approach 1:
The first member is divided into a first region with higher conductivity and a second region with lower conductivity. The second region is positioned at least partially beneath the drain pad, effectively segmenting the electrical path to reduce parasitic capacitance while maintaining necessary electrical connections through the first region.
Solution Approach 2:
Different regions of the first member are assigned different conductivity properties. The first region maintains high conductivity for efficient current flow, while the second region has reduced conductivity specifically beneath the drain pad to minimize parasitic capacitance, creating local quality differentiation to solve the contradiction.
2Loss of energy
If the conductivity of the first member beneath the drain pad is reduced, then the parasitic capacitance is suppressed, but the electrical connection may be weakened
Solution Approach 1:
The first member is segmented into functional regions: the first region with higher conductivity ensures reliable electrical connection, while the second region with lower conductivity suppresses parasitic capacitance. This segmentation allows simultaneous achievement of both goals.
Solution Approach 2:
The conductivity property is locally modified only in the second region beneath the drain pad, while the first region maintains its high conductivity. This localized quality change reduces parasitic capacitance without compromising overall electrical connection reliability.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The reduction in parasitic capacitance effectively suppresses loss in the semiconductor device, enhancing operational efficiency by minimizing the electrical capacitance between the conductive portion and the first member.
Implementation Method 1
Semiconductor devices experience significant loss due to parasitic capacitance, particularly drain pad-source capacitance
Data Source
AI summary
According to one embodiment, a semiconductor device includes a first electrode extending along a first direction, a second electrode including a portion extending along the first direction, a third electrode extending along the first direction, a first member, first and second semiconductor regions, and a conductive portion. A position of the second electrode in a second direction is between the third electrode and the first electrode in the second direction crossing the first direction. A distance along the second direction between the third and second electrodes is shorter than a distance along the second direction between the second and first electrodes. The first member includes first and second regions. A conductivity of the second region is lower than a conductivity of the first region. The first semiconductor region includes Alx1Ga1-x1N. The second semiconductor region includes Alx2Ga1-x2N. A conductive portion is electrically connected to the first electrode.