Semiconductor Device With Segmented Heat Detection Diodes
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Solution Overview
Problem
The challenge lies in effectively managing the heat detection and switching of two power MOSFETs in a single semiconductor chip to prevent erroneous operation and improve the performance and reliability of semiconductor devices, as existing approaches face issues with diode misoperation leading to unnecessary power MOSFET shutdowns.
Innovation Solution
A semiconductor device design where two power MOSFETs are integrated into one chip with strategically positioned diodes for heat detection, ensuring each diode is optimally placed to minimize interference and accurately detect excessive heat generation in its corresponding MOSFET, allowing for independent control and preventing erroneous shutdowns.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Volume of moving object
If two power MOSFETs are formed in one semiconductor chip, then the size of the semiconductor package and cost are decreased, but the reliability deteriorates due to potential diode misoperation causing unnecessary power MOSFET shutdowns
Solution Approach 1:
The semiconductor chip is segmented into two distinct detection regions: a first region for detecting heat generation of the first power MOSFET and a second region for detecting heat generation of the second power MOSFET. This spatial segmentation ensures that each diode monitors only its corresponding MOSFET, preventing misoperation and improving reliability while maintaining the integrated chip structure.
Solution Approach 2:
Each detection region is assigned specific local properties: the first diode is positioned adjacent to the first power MOSFET in the first region, and the second diode is positioned adjacent to the second power MOSFET in the second region. This local quality assignment ensures accurate localized heat detection and prevents cross-interference between the two detection systems.
2Reliability
If diodes are added to detect heat generation of power MOSFETs, then the reliability is improved through overheating protection, but the device complexity increases
Solution Approach 1:
The detection regions are merged into a single semiconductor chip along with the power MOSFETs, eliminating the need for separate detection devices. The diodes are integrated within the chip structure, sharing the same substrate and packaging, which reduces overall system complexity while maintaining reliable overheating protection.
Solution Approach 2:
The semiconductor chip serves multiple functions: it houses the power MOSFETs for power switching and simultaneously integrates the diodes for heat detection. This multi-functionality eliminates the need for separate detection circuits and reduces overall device complexity while ensuring reliable thermal monitoring.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This design enhances the performance and reliability of semiconductor devices by accurately detecting and managing heat in each power MOSFET, reducing the likelihood of erroneous operations and improving overall device efficiency.
Implementation Method 1
a first diode for detecting the heat generation (temperature) of the first circuit, and a second diode for detecting the heat generation (temperature) of the second circuit
Data Source
AI summary
To improve the performance and reliability of semiconductor devices. For the semiconductor chip CP1, power MOSFETs Q1 and Q2 for the switch, a diode DD1 for detecting the heat generation of the power MOSFET Q1, a diode DD2 for detecting the heat generation of the power MOSFET Q2, and plural pad electrodes PD are formed. The power MOSFET Q1 and the diode DD1 are arranged in a first MOSFET region RG1 on the side of a side SD1, and the power MOSFET Q2 and the diode DD2 are arranged in a second MOSFET region RG2 on the side of a side SD2. The diode DD1 is arranged along the side SD1, the diode DD2 is arranged along the side SD2, and all pad electrodes PD other than the pad electrodes PDS1 and PDS2 for the source are arranged along a side SD3 between the diodes DD1 and DD2.