Semiconductor Device With Separate Drivers For Synchronized Switching

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Solution Overview

Problem

Conventional high-voltage switching circuits face challenges in achieving fast switching speed while preventing current leakage or breakdown, particularly when normally-off elements turn off before normally-on elements, leading to unstable switching performance and potential overvoltage issues.

Innovation Solution

A semiconductor device configuration that includes a normally-on element and a normally-off element connected in series, with a diode and capacitor between the gate of the normally-on element and the low-voltage source, and separate drivers for each element, allowing simultaneous and stable control of their gate voltages to prevent overvoltage and ensure synchronized switching.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Device complexity

If a common driver is used to control both normally-off element and normally-on element, then device complexity is reduced, but switching speed is limited by parasitic capacitance of normally-on element

Engineering Contradiction:
Improvedriver configurationVSAvoidswitching speed
Core Design Contradiction:
Device complexityVSSpeed

Solution Approach 1:

The patent divides the control system into separate drivers: a first driver controls the normally-on element while a second driver controls the normally-off element. This segmentation allows each driver to be optimized independently, enabling the second driver to achieve fast switching for the normally-off element without being constrained by the parasitic capacitance of the normally-on element that would limit a common driver approach.

Inventive Principle:
Principle #1Segmentation

2Speed

If normally-off element switches off before normally-on element, then switching speed is improved, but overvoltage is applied to normally-off element causing current leakage or breakdown

Engineering Contradiction:
Improveswitching speedVSAvoidelement stability
Core Design Contradiction:
SpeedVSReliability

Solution Approach 1:

The patent employs a delay circuit in the second driver that delays the turn-off signal for the normally-off element. This preliminary timing adjustment ensures that the normally-on element turns off first, establishing a safe voltage condition before the normally-off element turns off. This prevents overvoltage stress and current leakage while still achieving fast switching through the normally-off element's inherent characteristics.

Inventive Principle:
Principle #10Preliminary action

3Strength

If normally-on element is used alone for switching, then voltage-withstanding capability is improved, but on-resistance increases and switching speed decreases

Engineering Contradiction:
Improvevoltage-withstanding capabilityVSAvoidswitching speed
Core Design Contradiction:
StrengthVSSpeed

Solution Approach 1:

The patent combines a normally-on element and a normally-off element in series to create a hybrid switching circuit. The normally-on element provides high voltage-withstanding capability and low on-resistance, while the normally-off element contributes fast switching speed. The separate driver configuration with delay control enables both elements to work synergistically, achieving performance that neither element could provide alone.

Inventive Principle:
Principle #5Merging (Combining)

Data Source

PatentUS9912332B2Semiconductor device
Publication Date: 2018.03.06 KK TOSHIBA
  • US9912332B2 patent drawing
  • US9912332B2 patent drawing
  • US9912332B2 patent drawing

AI summary

A semiconductor device includes a first transistor and a second transistor connected in series between a first voltage source and a second voltage source. A diode is connected between a gate of the first transistor and the second voltage source. A capacitor is connected to the gate of the first transistor. A first driver is connected to the gate of the first transistor through the capacitor. A second driver is connected to a gate of the second transistor. A threshold voltage of the second transistor is higher than a threshold voltage of the first transistor.