Semiconductor Device Single Mask Via Formation
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Solution Overview
Problem
The semiconductor industry faces challenges in further miniaturization and performance enhancement due to limitations in packaging techniques for semiconductor dies, particularly in achieving smaller form factors and lower power consumption while maintaining high integration density and performance.
Innovation Solution
The implementation of a chip-on-wafer (CoW) bonding configuration using fusion bonding, combined with a contact etch stop layer and dielectric material, allows for the stacking and interconnection of semiconductor devices, enabling efficient planarization and etching processes to create through-silicon and through-dielectric vias for enhanced electrical connectivity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If conventional packaging techniques are used for semiconductor dies, then manufacturing process is simpler, but integration density is lower and form factor is larger
Solution Approach 1:
The patent transitions from conventional 2D planar packaging to 3D stacked packaging by bonding multiple semiconductor wafers vertically. This dimensional change allows significantly higher integration density within the same footprint area, enabling more functional elements to be packed into a smaller overall device volume.
Solution Approach 2:
The patent implements a nested structure where multiple semiconductor wafers are stacked one on top of another, with each wafer containing functional elements. The etch stop layers and dielectric materials are nested between the wafers to enable through-wafer vias that connect different stacking levels, creating a nested hierarchical architecture.
2Volume of moving object
If semiconductor wafers are stacked to reduce form factor, then device size is smaller, but manufacturing precision requirements increase
Solution Approach 1:
The etch stop layers are deposited on the wafer surfaces before bonding occurs. This preliminary action creates predefined stopping points for subsequent etching processes, ensuring that through-wafer vias can be accurately formed at precise locations regardless of minor variations in wafer thickness or bonding alignment, thereby reducing the overall manufacturing precision requirements.
Solution Approach 2:
The etch stop layers act as intermediary reference planes between the wafer bonding interface and the via formation process. These intermediate layers provide a controlled etching stop that decouples the precision requirements of wafer bonding from those of via alignment, allowing each process to be optimized independently.
3Reliability
If through-wafer vias are formed for electrical connectivity, then electrical connection is enhanced, but manufacturing process complexity increases
Solution Approach 1:
The via formation process is segmented into distinct steps: first etching through the etch stop layer to create a controlled stop point, then continuing etch through the wafer to the bonding interface. This segmentation allows each etching stage to be independently controlled and optimized, improving via quality and electrical connectivity while making the overall process more manageable despite increased complexity.
Solution Approach 2:
The etch stop layers are prepared in advance before wafer bonding, creating pre-defined etching boundaries. This preliminary preparation simplifies the subsequent via formation process by providing natural etching stops that ensure consistent via depth and positioning, thereby improving electrical connectivity reliability.
4Manufacturing precision
If multiple etching processes are used to create vias, then via precision is improved, but manufacturing time increases
Solution Approach 1:
The etch stop layers are deposited and patterned before wafer bonding, establishing pre-defined etching boundaries in advance. This preliminary action enables subsequent etching processes to proceed more efficiently with better control, reducing the need for iterative adjustments and minimizing total manufacturing time while maintaining high via positioning precision.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach results in higher integration density, reduced form factor, and lower power consumption, while providing a method for efficient electrical connectivity between stacked semiconductor devices, thereby addressing the need for smaller, more performant semiconductor devices.
Implementation Method 1
The implementation of a chip-on-wafer (CoW) bonding configuration using fusion bonding
Data Source
AI summary
A semiconductor device and method are provided which utilizes a single mask to form openings for both a through substrate via as well as for a through dielectric via. In an embodiment a contact etch stop layer is deposited over and between a first semiconductor device and a second semiconductor device. A dielectric material is deposited over the contact etch stop layer between the first semiconductor device and the second semiconductor device. The different materials of the contact etch stop layer and the dielectric material is utilized such that a single mask may be used to form a through substrate via through the first semiconductor device and also to form a through dielectric via through the dielectric material.