Semiconductor Device High Voltage Insulation
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Solution Overview
Problem
Existing semiconductor devices that operate with high voltage tend to be large in size, necessitating a reduction in size while maintaining high voltage capability.
Innovation Solution
A semiconductor device design featuring a switching element with a drain, source, and gate electrode, along with control elements and leads, where a resin member covers the components and exposes specific lead portions, optimizing lead placement to minimize size while ensuring high voltage operation through strategic positioning and insulation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If the semiconductor device is designed for high voltage operation, then the voltage withstanding capability is improved, but the device size increases
Solution Approach 1:
The patent transitions from a conventional planar lead arrangement to a three-dimensional spatial configuration where leads are positioned at different heights and angles. The resin member covers the leads at various positions, creating vertical and diagonal spacing that increases creepage and clearance distances without expanding the device footprint, thus achieving high voltage withstanding capability while maintaining compact size.
Solution Approach 2:
The resin member envelops and integrates multiple leads and switching elements within a compact enclosed space. The leads are nested within the resin housing, with portions exposed at different locations and heights, creating a compact integrated structure that maximizes voltage isolation within minimal device volume.
2Area of stationary object
If leads are positioned closer together to reduce device size, then the device area is reduced, but the insulation between leads with potential difference deteriorates
Solution Approach 1:
Instead of increasing horizontal spacing between leads, the patent utilizes vertical dimension by positioning leads at different heights and covering them with resin at varying levels. This three-dimensional arrangement maintains small device area while achieving sufficient insulation distance through vertical and diagonal path lengths.
Solution Approach 2:
The resin member acts as an intermediary insulating material between leads that have potential differences. It provides creepage and clearance paths, ensuring adequate insulation while allowing leads to be positioned in close proximity for compact device design.
3Reliability
If the resin member covers all leads completely, then insulation is improved, but the ease of soldering and electrical connection deteriorates
Solution Approach 1:
The resin member provides differential coverage to leads: some portions of leads are completely covered for insulation, while other portions are exposed at specific locations and heights to facilitate soldering and electrical connections. This localized quality variation simultaneously achieves both insulation and ease of connection.
Solution Approach 2:
Each lead is segmented into covered portions (for insulation) and exposed portions (for connection). The resin member selectively covers specific sections of leads, creating functional zones that separate insulation requirements from connection requirements, enabling both high voltage withstanding and ease of soldering.
Data Source
AI summary
A semiconductor device includes leads, a switching element, a control element that controls the switching element, and a resin member covering the switching element, the control element and parts of the respective leads. The leads include a drain lead connected to a drain electrode of the switching element, a source lead connected to a source electrode of the switching element, and at least one control lead connected to the control element. The resin member includes a drain exposed portion at which the drain lead is exposed, a source exposed portion at which the source lead is exposed, and a control exposed portion at which the control lead is exposed. The distance in a first direction between the drain exposed portion and the source exposed portion is larger than the distance in the first direction between the control exposed portion and the source exposed portion.