Semiconductor Module Temperature Diagnosis via Current Delay Time

The patent uses delay time of main current as an intermediary parameter to indirectly measure semiconductor chip temperature. Instead of directly measuring temperature with sensors on each chip, the system measures the delay time between gate signal and collector current, which correlates with temperature through the transistor's thermal characteristics. This intermediary measurement approach achieves temperature detection without adding physical temperature sensors to each chip.

The patent replaces the mechanical/physical temperature sensor system with an electrical measurement system. Instead of using physical temperature sensors that require mounting on each semiconductor chip, the system uses electrical signal timing measurements (delay time of main current) to infer temperature. This substitution eliminates the need for physical temperature sensing hardware on each chip while still achieving temperature monitoring.

The patent uses delay time of main current as an intermediary parameter to indirectly measure semiconductor chip temperature. Instead of directly measuring temperature with sensors on each chip, the system measures the delay time between gate signal and collector current, which correlates with temperature through the transistor's thermal characteristics. This intermediary measurement approach achieves temperature detection without adding physical temperature sensors to each chip.

The patent uses the electrical characteristics (current delay time) of the semiconductor device itself as a copy or proxy for temperature measurement. Instead of adding separate temperature sensing hardware, the system exploits the inherent electrical response of the transistor to temperature changes. The delay time characteristic serves as an electrical copy of the thermal state, eliminating the need for separate temperature sensing components.

The patent segments the temperature detection by measuring delay time for each individual semiconductor chip or switch device rather than measuring only the average temperature of all parallel chips. By measuring the delay time of main current for each switch device individually, the system can identify temperature abnormalities in specific chips, enabling targeted monitoring and maintenance decisions.

The patent uses delay time of main current as an intermediary parameter to indirectly measure semiconductor chip temperature. Instead of directly measuring temperature with sensors on each chip, the system measures the delay time between gate signal and collector current, which correlates with temperature through the transistor's thermal characteristics. This intermediary measurement approach achieves temperature detection without adding physical temperature sensors to each chip.

The patent implements feedback control by continuously monitoring the delay time of main current, which reflects the temperature state of semiconductor chips. When the delay time indicates elevated temperature, the system can respond by adjusting cooling capacity or operating parameters. This feedback mechanism enables dynamic balancing between energy consumption and reliability, allowing reduced cooling only when temperatures are within safe ranges.

The patent performs preliminary detection of temperature abnormalities through delay time measurement before thermal runaway occurs. By detecting temperature increases early through the delay time characteristic, the system can take preventive actions such as adjusting operating conditions or activating cooling measures before the temperature reaches dangerous levels, thereby maintaining reliability without requiring continuous maximum cooling capacity.