Semiconductor Device Diamond Layer Heat Dissipation
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Solution Overview
Problem
Semiconductor devices with field effect transistors (FETs) face overheating issues due to inadequate heat dissipation at the drain electrode, primarily because protection films with lower thermal conductivity intervene between the semiconductor layer and the diamond layer, leading to suppressed heat transfer and increased risk of device failure.
Innovation Solution
The semiconductor device design includes a diamond layer in contact with the semiconductor layer between the gate and drain electrodes, and another diamond layer between the gate and source electrodes, with an insulating film between the gate and source electrode, facilitating efficient heat transfer and dissipation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a protection film with lower thermal conductivity is placed between the semiconductor layer and the diamond layer, then the protection film provides insulation and protection, but heat transfer from the semiconductor layer to the diamond layer is suppressed
Solution Approach 1:
The device is divided into distinct regions: a first diamond layer is positioned only between the gate electrode and the drain electrode to handle heat dissipation, while a protection film is positioned only between the gate electrode and the source electrode to provide insulation. This segmentation allows each component to perform its specialized function without interference, resolving the contradiction between protection and heat transfer.
Solution Approach 2:
Different regions of the device are assigned different thermal properties: the region between gate and drain has high thermal conductivity (diamond layer) for efficient heat dissipation, while the region between gate and source has lower thermal conductivity (protection film) for insulation. This local differentiation of thermal quality allows simultaneous optimization of both heat transfer and protection functions in different locations.
2Temperature
If a diamond layer with high thermal conductivity is placed between the gate electrode and the drain electrode, then heat dissipation is improved, but the device structure becomes more complex
Solution Approach 1:
Instead of applying a diamond layer uniformly across the entire gate electrode structure, the invention segments the diamond layer application to only the region between the gate electrode and the drain electrode where heat dissipation is most critical. This selective placement reduces structural complexity while maintaining effective heat management.
Solution Approach 2:
The diamond layer is applied partially rather than completely - only in the region where heat dissipation is needed (between gate and drain). This partial action approach avoids the complexity of providing diamond layers everywhere, while still achieving sufficient heat dissipation performance in the critical region.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration effectively suppresses overheating and degradation of the semiconductor device by ensuring efficient heat transfer from the semiconductor layer to the diamond layers, thereby maintaining device performance.
Implementation Method 1
A diamond layer having high thermal conductivity is located over the protection film between a gate electrode and a source electrode and over the protection film between the gate electrode and a drain electrode
Data Source
AI summary
A semiconductor device includes a source electrode and a drain electrode located over a surface of a semiconductor layer including an electron transit layer and an electron supply layer. A gate electrode is located between the source electrode and the drain electrode. A first diamond layer is located between the source electrode and the drain electrode over the surface with an insulating film therebetween. A second diamond layer is located directly on the surface between the gate electrode and the drain electrode. Of heat generated by the semiconductor layer of the semiconductor device in operation, heat on the side of the electrode on which a relatively strong electric field is applied is efficiently transferred to the second diamond layer. The semiconductor device achieves an excellent heat dissipation property from the semiconductor layer and effectively suppresses overheating and a failure and degradation of the characteristics due to the overheating.