Semiconductor Patterning With Diamond Pillars for Defect Detection

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Solution Overview

Problem

Current methods for forming semiconductor structures, particularly for DRAM devices, face challenges in achieving precise control over pillar and gap patterns, leading to difficulties in detecting pattern defects and maintaining manufacturing yield and cost efficiency.

Innovation Solution

A method involving the formation of strip patterns, hard mask layers, and a spacer layer with diamond-like profiles, allowing for self-aligned double patterning technology, where pillar patterns are formed with diamond-like profiles and a spacer layer defines gap patterns, enabling independent adjustment of gap pattern dimensions and improving detection capabilities.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Measurement precision

If conventional methods are used to form pillar and gap patterns, then manufacturing process is simpler, but pattern defect detection precision deteriorates

Engineering Contradiction:

Improvepattern defect detection precisionVSAvoidmanufacturing process complexity

Core Design Contradiction:

Measurement precisionVSDevice complexity

Solution Approach 1:

The manufacturing process is segmented into distinct stages: forming pillar patterns with diamond-like profiles, depositing spacer layers, and creating gap patterns. This segmentation allows each stage to be optimized independently, improving pattern defect detection precision while maintaining manageable process complexity through systematic division of steps.

Inventive Principle:

Principle #1Segmentation

Solution Approach 2:

Pillar patterns with diamond-like profiles are formed in advance before creating gap patterns. This preliminary action establishes a precise reference structure that enables better detection of subsequent gap pattern defects, as the pillar patterns serve as predetermined alignment and dimensional references.

Inventive Principle:

Principle #10Preliminary action

2Manufacturing precision

If spacer layer thickness is increased to define gap patterns, then gap pattern dimensions are improved, but core pattern delamination risk increases

Engineering Contradiction:

Improvegap pattern dimension precisionVSAvoidcore pattern adhesion reliability

Core Design Contradiction:

Manufacturing precisionVSReliability

Solution Approach 1:

The spacer layer is formed with locally optimized properties: diamond-like profiles that provide precise dimensional control for gap patterns, while the deposition process and material selection ensure appropriate adhesion characteristics at the interface with core patterns. This local quality optimization achieves both precision and reliability without requiring excessive thickness.

Inventive Principle:

Principle #3Local quality

Solution Approach 2:

The diamond-like profile geometry of the spacer layer is used to achieve precise gap pattern dimensions through shape control rather than thickness increase. By optimizing the angular and dimensional parameters of the diamond profile, accurate gap dimensions are obtained while maintaining thinner spacer layers that reduce delamination risk.

Inventive Principle:

Principle #35Parameter changes

3Stability of the object's composition

If pillar patterns are formed with diamond-like profiles, then pattern balance is improved, but manufacturing process complexity increases

Engineering Contradiction:

Improvepattern balance stabilityVSAvoidpatterning process complexity

Core Design Contradiction:

Stability of the object's compositionVSDevice complexity

Solution Approach 1:

The formation of pillar patterns with diamond-like profiles uses periodic etching or deposition cycles that create the characteristic diamond shape through repeated stages. This periodic action achieves stable and balanced pattern composition through controlled oscillation between different process states, improving reliability while keeping each periodic cycle relatively simple.

Inventive Principle:

Principle #19Periodic action

4Ease of manufacture

If self-aligned double patterning is implemented, then manufacturing cost is reduced, but process precision requirements increase

Engineering Contradiction:

Improvemanufacturing cost efficiencyVSAvoidprocess alignment precision

Core Design Contradiction:

Ease of manufactureVSManufacturing precision

Solution Approach 1:

The self-aligned double patterning process uses the previously formed pillar patterns as automatic alignment references for subsequent gap pattern formation. The spacer layer deposition and etching processes are self-aligned to the pillar patterns, eliminating the need for separate alignment steps and reducing overall process precision requirements while maintaining cost efficiency.

Inventive Principle:

Principle #25Self-service

Data Source

PatentUS20240170296A1Method for forming semiconductor structure and semiconductor structure

Publication Date: 2024.05.23 WINBOND ELECTRONICS CORP

AI summary

A method for forming a semiconductor structure includes forming strip patterns over a semiconductor substrate, forming a hard mask layer over the strip patterns, and forming a patterned photoresist layer over the hard mask layer. The patterned photoresist layer has a plurality of first openings. The method also includes etching the hard mask layer using the patterned photoresist layer. Remaining portions of the hard mask layer form a plurality of pillar patterns that are separated from one another. The method also includes depositing a dielectric layer along the plurality of pillar patterns, etching the dielectric layer to form a plurality of second openings, removing the plurality of pillar patterns to form a plurality of third openings in the dielectric layer, and etching the strip patterns using the dielectric layer as a mask.